component
GT100P06D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GT100P06D5
GOFORD · MOSFETs · DFN5X6-8L
GT100P06D5 from GOFORD, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; body diode anode, with VDS of -60V and continuous ID of -60A at TC = 25ºC. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the source net with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the source net with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS limited to ±20V, threshold -1.1V to -2.5V at ID = -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, connected with pins 6, 7 and 8; VDS -60V max, pulsed ID -240A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -60 | A | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -38 | A | TC = 100ºC | 1 | ||
| Pulsed Drain Current | IDM | -240 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 104 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 225 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62.5 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 1.2 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1.1 | -1.9 | -2.5 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 7.5 | 9 | mΩ | VGS = -10V, ID = -15A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 10 | 13 | mΩ | VGS = -4.5V, ID = -15A | 2 | |
| Continuous Body Diode Current | IS | -60 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -15A, VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 29 | S | VDS = -5V, ID = -15A | 2 | ||
| Input Capacitance | Ciss | 3700 | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 645 | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 32 | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 47 | nC | VDD = -30V, ID = -15A, VGS = -10V | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDD = -30V, ID = -15A, VGS = -10V | 2 | ||
| Gate-Drain Charge | Qgd | 9 | nC | VDD = -30V, ID = -15A, VGS = -10V | 2 | ||
| Turn-on Delay Time | td(on) | 4 | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 | ||
| Turn-on Rise Time | tr | 2 | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 14 | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 | ||
| Turn-off Fall Time | tf | 3 | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 105 | nC | IF = -15A, VGS = 0V, di/dt=-100A/us | 2 | ||
| Reverse Recovery Time | Trr | 60 | ns | IF = -15A, VGS = 0V, di/dt=-100A/us | 2 |
CAD (KiCad official)
- Symbol:
GT100P06D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
gt100p06d5-etched.step/gt100p06d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt100p06d5.step/gt100p06d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
05a7a9910a60c326, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GT100P06D5
**GOFORD** · MOSFETs · DFN5X6-8L
GT100P06D5 from GOFORD, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; body diode anode, with VDS of -60V and continuous ID of -60A at TC = 25ºC. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to the source net with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to the source net with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS limited to ±20V, threshold -1.1V to -2.5V at ID = -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET, connected with pins 6, 7 and 8; VDS -60V max, pulsed ID -240A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | -60 | | | A | TC = 25ºC | 1 |
| Continuous Drain Current | ID | -38 | | | A | TC = 100ºC | 1 |
| Pulsed Drain Current | IDM | -240 | | | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 104 | W | TC = 25ºC | 1 |
| Single pulse avalanche energy | EAS | | | 225 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 62.5 | ºC/W | | 1 |
| Maximum Junction-to-Case | RthJC | | | 1.2 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS = -60V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1.1 | -1.9 | -2.5 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 7.5 | 9 | mΩ | VGS = -10V, ID = -15A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 10 | 13 | mΩ | VGS = -4.5V, ID = -15A | 2 |
| Continuous Body Diode Current | IS | | | -60 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | -1.2 | V | TJ = 25ºC, ISD = -15A, VGS = 0V | 2 |
| Forward Transconductance | gFS | | 29 | | S | VDS = -5V, ID = -15A | 2 |
| Input Capacitance | Ciss | | 3700 | | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 645 | | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 32 | | pF | VGS = 0V, VDS = -30V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 47 | | nC | VDD = -30V, ID = -15A, VGS = -10V | 2 |
| Gate-Source Charge | Qgs | | 11 | | nC | VDD = -30V, ID = -15A, VGS = -10V | 2 |
| Gate-Drain Charge | Qgd | | 9 | | nC | VDD = -30V, ID = -15A, VGS = -10V | 2 |
| Turn-on Delay Time | td(on) | | 4 | | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 |
| Turn-on Rise Time | tr | | 2 | | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 |
| Turn-off Delay Time | td(off) | | 14 | | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 |
| Turn-off Fall Time | tf | | 3 | | ns | VDD = -30V, ID = -15A, RG = 3Ω | 2 |
| Reverse Recovery Charge | Qrr | | 105 | | nC | IF = -15A, VGS = 0V, di/dt=-100A/us | 2 |
| Reverse Recovery Time | Trr | | 60 | | ns | IF = -15A, VGS = 0V, di/dt=-100A/us | 2 |
## CAD (KiCad official)
- Symbol: `GT100P06D5`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files: `gt100p06d5-etched.step` / `gt100p06d5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt100p06d5.step` / `gt100p06d5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/gt100p06d5-datasheet.pdf) (6 pp, sha256 `05a7a9910a60c326`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gt100p06d5-datasheet.pdf)