component
GT095N04D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GT095N04D5
GOFORD · MOSFETs · DFN5x6-8L
GT095N04D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 2 and 3, with continuous drain-to-source current up to 54 A (ID) at TC = 25ºC. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 1 and 3, with continuous drain-to-source current up to 54 A (ID) at TC = 25ºC. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 1 and 2, with continuous drain-to-source current up to 54 A (ID) at TC = 25ºC. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with maximum gate-source voltage of ±20 V and threshold VGS(th) of 1.0 V min to 2.5 V max at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 6-8, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 7 and 8, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 8, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5-7, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
GT095N04D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
gt095n04d5-etched.step/gt095n04d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt095n04d5.step/gt095n04d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
b2f2237dc0c0d460, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GT095N04D5
**GOFORD** · MOSFETs · DFN5x6-8L
GT095N04D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 2 and 3, with continuous drain-to-source current up to 54 A (ID) at TC = 25ºC. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 1 and 3, with continuous drain-to-source current up to 54 A (ID) at TC = 25ºC. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, shared with pins 1 and 2, with continuous drain-to-source current up to 54 A (ID) at TC = 25ºC. |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with maximum gate-source voltage of ±20 V and threshold VGS(th) of 1.0 V min to 2.5 V max at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 6-8, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 7 and 8, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 8, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, shared with pins 5-7, with drain-source voltage rating of 40 V and pulsed drain current up to 216 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `GT095N04D5`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `gt095n04d5-etched.step` / `gt095n04d5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt095n04d5.step` / `gt095n04d5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/gt095n04d5-datasheet.pdf) (6 pp, sha256 `b2f2237dc0c0d460`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gt095n04d5-datasheet.pdf)