# GT090N06D52

**GOFORD** · MOSFETs · DFN5x6-8

GT090N06D52 from GOFORD, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (60V, 40A rated dual N-channel device). |
| 2 | G1 | input | Gate of MOSFET 1; VGS maximum ±20V, threshold 1.0V min to 2.5V max. |
| 3 | S2 | passive | Source of MOSFET 2 (60V, 40A rated dual N-channel device). |
| 4 | G2 | input | Gate of MOSFET 2; VGS maximum ±20V, threshold 1.0V min to 2.5V max. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pins 5 and 6; VDS maximum 60V. |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pins 5 and 6; VDS maximum 60V. |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pins 7 and 8; VDS maximum 60V. |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pins 7 and 8; VDS maximum 60V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID |  |  | 40 | A | TC = 25ºC | 1 |
| Continuous Drain Current | ID |  |  | 25 | A | TC = 100ºC | 1 |
| Pulsed Drain Current | IDM |  |  | 160 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power Dissipation | PD |  |  | 62 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 56 | mJ |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  |  | 65 | ºC/W |  | 1 |
| Thermal Resistance, Junction-to-Case | RthJC |  |  | 2 | ºC/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 60V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 9 | 14 | mΩ | VGS = 10V, ID = 14A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 12 | 18 | mΩ | VGS = 4.5V, ID = 10A | 2 |
| Continuous Body Diode Current | IS |  |  | 40 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD |  |  | 1.2 | V | TJ = 25ºC, ISD = 14A, VGS = 0V | 2 |

## CAD (KiCad official)

- Symbol: `GT090N06D52`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `gt090n06d52-etched.step` / `gt090n06d52-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt090n06d52.step` / `gt090n06d52.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](https://www.gofordsemi.com/upload/cn/propdf/GT090N06D52.pdf) (6 pp, sha256 `ee999410de94ee8b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/gt090n06d52-datasheet.pdf)