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GT065P06D5

Public Made by Adom

by adom

GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsgt065p06d5factory-2.0.0extractor-text

Verified GT065P06D5

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: GT065P06D5 · DFN5x6-8L · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 6-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-bcc2lnm9/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ gt065p06d5.kicad_sym✓ gt065p06d5.kicad_mod✓ gt065p06d5.step
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GT065P06D5

GOFORD · MOSFETs · DFN5x6-8L

GT065P06D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, with continuous body diode current rated -103 A at TC = 25ºC.
2 S passive Source terminal of the P-channel MOSFET, with continuous body diode current rated -103 A at TC = 25ºC.
3 S passive Source terminal of the P-channel MOSFET, with continuous body diode current rated -103 A at TC = 25ºC.
4 G input Gate terminal, with a maximum gate-source voltage of ±20 V and a threshold of -1 V min to -2.5 V max.
5 D passive Drain terminal, with a maximum drain-source voltage of -60 V and continuous drain current of -103 A.
6 D passive Drain terminal, with a maximum drain-source voltage of -60 V and continuous drain current of -103 A.
7 D passive Drain terminal, with a maximum drain-source voltage of -60 V and continuous drain current of -103 A.
8 D passive Drain terminal, with a maximum drain-source voltage of -60 V and continuous drain current of -103 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TC = 25ºC 1
Continuous Drain Current ID -103 A TC = 25ºC 1
Pulsed Drain Current IDM -412 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 178 W TC = 25ºC 1
Single pulse avalanche energy EAS 272 mJ Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω (note 2) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 0.7 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -60V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 5.9 7 mΩ VGS = -10V, ID = -20A 2
Drain-Source On-Resistance RDS(on) 7.4 9 mΩ VGS = -4.5V, ID = -15A 2
Forward Transconductance gFS 48 S VDS = -5V, ID = -20A 2
Input Capacitance Ciss 5326 pF VGS = 0V, VDS = -30V, f = 1.0MHz 2
Output Capacitance Coss 1144 pF 2
Reverse Transfer Capacitance Crss 57 pF 2
Total Gate Charge Qg 62 nC VDD = -30V, ID = -20A, VGS = -10V 2
Gate-Source Charge Qgs 9.3 nC 2
Gate-Drain Charge Qgd 16.8 nC 2
Turn-on Delay Time td(on) 20 ns VDD = -30V, ID = -20A, RG = 3Ω 2
Turn-on Rise Time tr 18 ns 2
Turn-off Delay Time td(off) 55 ns 2
Turn-off Fall Time tf 35 ns 2
Continuous Body Diode Current IS -103 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -20A, VGS = 0V 2
Reverse Recovery Charge Qrr 71 nC IF = -20A, VGS = 0V, di/dt = -100A/us 2
Reverse Recovery Time Trr 49 ns 2

CAD (KiCad official)

  • Symbol: GT065P06D5
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: gt065p06d5-etched.step / gt065p06d5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt065p06d5.step / gt065p06d5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 307a103361d3d410, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF