component
GT045N10D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GT045N10D5
GOFORD · MOSFETs · DFN-8(5x6)
GT045N10D5 from GOFORD, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pin 1 marked by a dot on the package. |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal with VGS rated at ±20V maximum and a threshold of 1V to 3V. |
| 5 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 6 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 7 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 8 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 4 | 4.5 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 5.6 | 6.3 | mΩ | VGS = 4.5V, ID = 20A | 2 | |
| Continuous Body Diode Current | IS | 80 | A | TC = 25ºC | 2 | ||
| Pulsed Diode Forward Current | ISM | 240 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.3 | V | TJ = 25ºC, ISD = 40A, VGS = 0V | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Single Pulse Avalanche Energy | EAS | 42 | mJ | TC = 25ºC | 1 | ||
| Power Dissipation | PD | 85 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | TC = 25ºC | 1 | |
| Thermal Resistance, Junction-to-Case | RthJc | 1.47 | ºC/W | 1 | |||
| Forward Transconductance | gFS | 60 | S | VDS=5V,ID=20A | 2 | ||
| Input Capacitance | Ciss | 6124 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 792 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 15 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 101.6 | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 20.6 | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 28.7 | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 | ||
| Turn-on Delay Time | td(on) | 28.2 | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 | ||
| Turn-on Rise Time | tr | 7.5 | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 | ||
| Turn-off Delay Time | td(off) | 81.9 | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 | ||
| Turn-off Fall Time | tf | 20.1 | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 |
CAD (KiCad official)
- Symbol:
GT045N10D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
gt045n10d5-etched.step/gt045n10d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt045n10d5.step/gt045n10d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
0c5dd81b47d5bede, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GT045N10D5
**GOFORD** · MOSFETs · DFN-8(5x6)
GT045N10D5 from GOFORD, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, pin 1 marked by a dot on the package. |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal with VGS rated at ±20V maximum and a threshold of 1V to 3V. |
| 5 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 6 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 7 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 8 | D | passive | Drain terminal, rated 100V VDS and 80A continuous drain current. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN-8(5x6) |
| Category | Transistors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 100V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 4 | 4.5 | mΩ | VGS = 10V, ID = 20A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 5.6 | 6.3 | mΩ | VGS = 4.5V, ID = 20A | 2 |
| Continuous Body Diode Current | IS | | | 80 | A | TC = 25ºC | 2 |
| Pulsed Diode Forward Current | ISM | | | 240 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | 1.3 | V | TJ = 25ºC, ISD = 40A, VGS = 0V | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | 80 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | | | 150 | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Single Pulse Avalanche Energy | EAS | | | 42 | mJ | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 85 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | TC = 25ºC | 1 |
| Thermal Resistance, Junction-to-Case | RthJc | | | 1.47 | ºC/W | | 1 |
| Forward Transconductance | gFS | | 60 | | S | VDS=5V,ID=20A | 2 |
| Input Capacitance | Ciss | | 6124 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 792 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 15 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 101.6 | | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 |
| Gate-Source Charge | Qgs | | 20.6 | | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 |
| Gate-Drain Charge | Qgd | | 28.7 | | nC | VDD = 50V, ID = 40A, VGS = 10V | 2 |
| Turn-on Delay Time | td(on) | | 28.2 | | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 |
| Turn-on Rise Time | tr | | 7.5 | | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 |
| Turn-off Delay Time | td(off) | | 81.9 | | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 |
| Turn-off Fall Time | tf | | 20.1 | | nS | VDD = 50V, ID = 40A, RG = 4.5Ω | 2 |
## CAD (KiCad official)
- Symbol: `GT045N10D5`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `gt045n10d5-etched.step` / `gt045n10d5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt045n10d5.step` / `gt045n10d5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/gt045n10d5-datasheet.pdf) (6 pp, sha256 `0c5dd81b47d5bede`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gt045n10d5-datasheet.pdf)