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GT011N03ME

Public Made by Adom

by adom

GOFORD MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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GT011N03ME

GOFORD · MOSFETs · TO-263

GT011N03ME from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; Gate-Source voltage is rated at ±18V, with threshold voltage VGS(th) of 1.0V min to 2.5V max at ID = 250µA, and ESD (HBM) is stated as >8KV.
2 D passive Drain, also the package tab; Drain-Source voltage is rated at 30V with continuous drain current of 209A and pulsed drain current of 836A.
3 S passive Source; RDS(on) is below 1.6mΩ at VGS = 10V and below 2.0mΩ at VGS = 4.5V, and the body diode continuous current is 209A max.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC = 25ºC 1
Continuous Drain Current ID 209 A TC = 25ºC 1
Pulsed Drain Current IDM 836 A TC = 25ºC, note1 1
Gate-Source Voltage VGS -18 18 V TC = 25ºC 1
Power Dissipation PD 89 W TC = 25ºC 1
Single pulse avalanche energy EAS 361 mJ TC = 25ºC, note2 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W 1
Maximum Junction-to-Case RthJC 1.4 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -50 50 uA VGS = ±18V 2
Gate-Source Threshold Voltage VGS(th) 1 1.7 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 1.28 1.6 mΩ VGS = 10V, ID = 10A 2
Drain-Source On-Resistance RDS(on) 1.66 2 mΩ VGS = 4.5V, ID = 10A 2
Continuous Body Diode Current IS 209 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 30A, VGS = 0V 2
Forward Transconductance gFS 36 S VGS = 5V, ID = 10A 2
Input Capacitance Ciss 6140 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Output Capacitance Coss 2171 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 552 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Total Gate Charge Qg 98 nC VDD = 15V, ID = 30A, VGS = 10V 2
Gate-Source Charge Qgs 16 nC VDD = 15V, ID = 30A, VGS = 10V 2
Gate-Drain Charge Qgd 11 nC VDD = 15V, ID = 30A, VGS = 10V 2
Turn-on Delay Time td(on) 13 ns VDD = 15V, ID = 30A, RG = 1.6Ω 2
Turn-on Rise Time tr 7.5 ns VDD = 15V, ID = 30A, RG = 1.6Ω 2
Turn-off Delay Time td(off) 51 ns VDD = 15V, ID = 30A, RG = 1.6Ω 2
Turn-off Fall Time tf 8.6 ns VDD = 15V, ID = 30A, RG = 1.6Ω 2
Reverse Recovery Charge Qrr 112 nC IF = 30A, VGS = 0V, di/dt=100A/us 2
Reverse Recovery Time Trr 32 ns IF = 30A, VGS = 0V, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: GT011N03ME
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: gt011n03me-etched.step / gt011n03me-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gt011n03me.step / gt011n03me.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 e38ba6c863ed1899, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF