# GT011N03D5E

**GOFORD** · MOSFETs · DFN5x6-8L

GT011N03D5E from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; body diode anode, continuous body diode current up to 209A at TC=25ºC. |
| 2 | S | passive | Source of the N-channel MOSFET, connected to the same source node as pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, connected to the same source node as pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±18V maximum, threshold 1.0V to 2.5V at 250µA, ESD (HBM) 6.5KV. |
| 5 | D | passive | Drain of the MOSFET; VDS 30V maximum, continuous ID 209A at TC=25ºC. |
| 6 | D | passive | Drain of the MOSFET, connected to the same drain node as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the MOSFET, connected to the same drain node as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the MOSFET, connected to the same drain node as pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 209 | A | TC = 25ºC | 1 |
| Continuous Drain Current | ID |  |  | 150 | A | TC = 100ºC | 1 |
| Pulsed Drain Current (note1) | IDM |  |  | 836 | A |  | 1 |
| Gate-Source Voltage | VGS | -18 |  | 18 | V |  | 1 |
| Power Dissipation | PD |  |  | 89 | W |  | 1 |
| Single pulse avalanche energy (note2) | EAS |  |  | 361 | mJ |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | ºC |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 30V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -50 |  | 50 | uA | VGS = ±18V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 1.2 | 1.4 | mΩ | VGS = 10V, ID = 40A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 1.6 | 2 | mΩ | VGS = 4.5V, ID = 30A | 2 |
| Continuous Body Diode Current | IS |  |  | 209 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD |  |  | 1.2 | V | TJ = 25ºC, ISD = 40A, VGS = 0V | 2 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  | 55 |  | ºC/W |  | 1 |
| Thermal Resistance, Junction-to-Case | RthJC |  | 1.7 |  | ºC/W |  | 1 |

## CAD (KiCad official)

- Symbol: `GT011N03D5E`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `gt011n03d5e-etched.step` / `gt011n03d5e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt011n03d5e.step` / `gt011n03d5e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](https://www.gofordsemi.com/upload/cn/propdf/GT011N03D5E.pdf) (6 pp, sha256 `56ce2146db904389`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/gt011n03d5e-datasheet.pdf)