component
GT009N04D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GT009N04D5
GOFORD · MOSFETs · DFN5x6-8L
GT009N04D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with body diode continuous current IS up to 100A at TC=25ºC. |
| 2 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with body diode continuous current IS up to 100A at TC=25ºC. |
| 3 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with body diode continuous current IS up to 100A at TC=25ºC. |
| 4 | G | input | Gate of the N-channel MOSFET with absolute maximum VGS of ±20V and threshold VGS(th) of 1.0V min to 2.5V max at ID=250µA. |
| 5 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 6 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 7 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 8 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 45 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 100 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 125 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 240 | mJ | TC = 25ºC; Tj=25℃, VDD=45V, VGS=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | TC = 25ºC | 1 | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 1 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 45 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 45V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 1.1 | 1.3 | mΩ | VGS = 10V, ID = 20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 1.5 | 1.8 | mΩ | VGS = 4.5V, ID = 20A | 2 | |
| Forward Transconductance | gFS | 63 | S | VGS = 5V, ID = 20A | 2 | ||
| Continuous Body Diode Current | IS | 100 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 20A, VGS = 0V | 2 | ||
| Input Capacitance | Ciss | 6864 | pF | VGS = 0V, VDS = 20V, f = 1.0Mhz | 2 | ||
| Output Capacitance | Coss | 1322 | pF | VGS = 0V, VDS = 20V, f = 1.0Mhz | 2 | ||
| Reverse Transfer Capacitance | Crss | 1115 | pF | VGS = 0V, VDS = 20V, f = 1.0Mhz | 2 | ||
| Total Gate Charge | Qg | 86 | nC | VDD = 20V, ID = 20A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 19 | nC | VDD = 20V, ID = 20A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 6 | nC | VDD = 20V, ID = 20A, VGS = 10V | 2 | ||
| Turn-on Delay Time | td(on) | 17 | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 | ||
| Turn-on Rise Time | tr | 5.5 | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 56 | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 | ||
| Turn-off Fall Time | tf | 5 | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 60 | nC | IF = 20A, VGS = 0V, di/dt=400A/us | 2 | ||
| Reverse Recovery Time | Trr | 22 | ns | IF = 20A, VGS = 0V, di/dt=400A/us | 2 |
CAD (KiCad official)
- Symbol:
GT009N04D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
gt009n04d5-etched.step/gt009n04d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gt009n04d5.step/gt009n04d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
ddf7406e4c390e5d, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GT009N04D5
**GOFORD** · MOSFETs · DFN5x6-8L
GT009N04D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with body diode continuous current IS up to 100A at TC=25ºC. |
| 2 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with body diode continuous current IS up to 100A at TC=25ºC. |
| 3 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source, with body diode continuous current IS up to 100A at TC=25ºC. |
| 4 | G | input | Gate of the N-channel MOSFET with absolute maximum VGS of ±20V and threshold VGS(th) of 1.0V min to 2.5V max at ID=250µA. |
| 5 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 6 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 7 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 8 | D | passive | Drain of the MOSFET (VDS 45V max, ID 100A continuous, 400A pulsed); pins 5-8 are drain. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 45 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | 100 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | | | 400 | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 125 | W | TC = 25ºC | 1 |
| Single pulse avalanche energy | EAS | | | 240 | mJ | TC = 25ºC; Tj=25℃, VDD=45V, VGS=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | TC = 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 50 | ºC/W | | 1 |
| Maximum Junction-to-Case | RthJC | | | 1 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 45 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 45V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 1.1 | 1.3 | mΩ | VGS = 10V, ID = 20A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 1.5 | 1.8 | mΩ | VGS = 4.5V, ID = 20A | 2 |
| Forward Transconductance | gFS | | 63 | | S | VGS = 5V, ID = 20A | 2 |
| Continuous Body Diode Current | IS | | | 100 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 20A, VGS = 0V | 2 |
| Input Capacitance | Ciss | | 6864 | | pF | VGS = 0V, VDS = 20V, f = 1.0Mhz | 2 |
| Output Capacitance | Coss | | 1322 | | pF | VGS = 0V, VDS = 20V, f = 1.0Mhz | 2 |
| Reverse Transfer Capacitance | Crss | | 1115 | | pF | VGS = 0V, VDS = 20V, f = 1.0Mhz | 2 |
| Total Gate Charge | Qg | | 86 | | nC | VDD = 20V, ID = 20A, VGS = 10V | 2 |
| Gate-Source Charge | Qgs | | 19 | | nC | VDD = 20V, ID = 20A, VGS = 10V | 2 |
| Gate-Drain Charge | Qgd | | 6 | | nC | VDD = 20V, ID = 20A, VGS = 10V | 2 |
| Turn-on Delay Time | td(on) | | 17 | | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 |
| Turn-on Rise Time | tr | | 5.5 | | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 |
| Turn-off Delay Time | td(off) | | 56 | | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 |
| Turn-off Fall Time | tf | | 5 | | ns | VDD = 20V, ID = 20A, RG = 3Ω | 2 |
| Reverse Recovery Charge | Qrr | | 60 | | nC | IF = 20A, VGS = 0V, di/dt=400A/us | 2 |
| Reverse Recovery Time | Trr | | 22 | | ns | IF = 20A, VGS = 0V, di/dt=400A/us | 2 |
## CAD (KiCad official)
- Symbol: `GT009N04D5`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `gt009n04d5-etched.step` / `gt009n04d5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gt009n04d5.step` / `gt009n04d5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/gt009n04d5-datasheet.pdf) (6 pp, sha256 `ddf7406e4c390e5d`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gt009n04d5-datasheet.pdf)