component
GS1Z
Public Made by Adomby adom
GOODWORK Diodes - General Purpose, SMA. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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GS1Z
GOODWORK · Diodes - General Purpose · SMA
GS1Z from GOODWORK, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Instantaneous Forward Voltage | VF | 1.15 | V | at 1 A | 1 | ||
| Maximum Reverse Current | IR | 5 | μA | TJ = 25 °C | 1 | ||
| Maximum Reverse Current | IR | 50 | μA | TJ = 125 °C | 1 | ||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 2000 | V | 1 | |||
| Maximum Average Forward Rectified Current | IF(AV) | 1 | A | 1 | |||
| Peak Forward Surge Current | IFSM | 30 | A | 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) | 1 | ||
| Operating and Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | Operating and Storage Temperature Range | 1 | |
| Typical Junction Capacitance | Cj | 20 | pF | Measured at 1 MHz and applied reverse voltage of 4 V D.C | 1 | ||
| Typical Thermal Resistance Junction to Ambient | RθJA | 95 | °C/W | P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas | 1 | ||
| Peak Reflow Temperature (Tp) | 260 | ℃ | Pb-free reflow; printed +260(+0/-5)℃; do not exceed +260℃ | 3 | |||
| Ramp-down Rate | 6 | ℃/sec | From peak temperature | 3 | |||
| Ramp-up Rate (Ts(max) to TL) | 3 | ℃/sec | Ts(max) to TL | 3 | |||
| Time 25℃ to Peak Temp (TP) | 8 | min | Time from 25℃ to peak temperature | 3 | |||
| Time within 5℃ of actual Peak Temp (tp) | tp | 30 | s | Time within 5℃ of actual peak temperature | 3 |
CAD (KiCad official)
- Symbol:
GS1Z - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
gs1z-etched.step/gs1z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gs1z.step/gs1z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (4 pp, sha256
67921e9297b22a3d, retrieved 2026-10-14, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GS1Z
**GOODWORK** · Diodes - General Purpose · SMA
GS1Z from GOODWORK, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Instantaneous Forward Voltage | VF | | | 1.15 | V | at 1 A | 1 |
| Maximum Reverse Current | IR | | | 5 | μA | TJ = 25 °C | 1 |
| Maximum Reverse Current | IR | | | 50 | μA | TJ = 125 °C | 1 |
| Maximum Repetitive Peak Reverse Voltage | VRRM | | | 2000 | V | | 1 |
| Maximum Average Forward Rectified Current | IF(AV) | | | 1 | A | | 1 |
| Peak Forward Surge Current | IFSM | | | 30 | A | 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) | 1 |
| Operating and Storage Temperature Range | Tj, Tstg | -55 | | 150 | °C | Operating and Storage Temperature Range | 1 |
| Typical Junction Capacitance | Cj | | 20 | | pF | Measured at 1 MHz and applied reverse voltage of 4 V D.C | 1 |
| Typical Thermal Resistance Junction to Ambient | RθJA | | 95 | | °C/W | P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas | 1 |
| Peak Reflow Temperature (Tp) | | | | 260 | ℃ | Pb-free reflow; printed +260(+0/-5)℃; do not exceed +260℃ | 3 |
| Ramp-down Rate | | | | 6 | ℃/sec | From peak temperature | 3 |
| Ramp-up Rate (Ts(max) to TL) | | | | 3 | ℃/sec | Ts(max) to TL | 3 |
| Time 25℃ to Peak Temp (TP) | | | | 8 | min | Time from 25℃ to peak temperature | 3 |
| Time within 5℃ of actual Peak Temp (tp) | tp | | | 30 | s | Time within 5℃ of actual peak temperature | 3 |
## CAD (KiCad official)
- Symbol: `GS1Z`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA (KiCad packages3D, STEP)
- 3D model files: `gs1z-etched.step` / `gs1z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gs1z.step` / `gs1z.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOODWORK datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757771761842827264) (4 pp, sha256 `67921e9297b22a3d`, retrieved 2026-10-14, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gs1z-datasheet.pdf)