component
GS10M
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Yangzhou Yangjie Elec Tech Diodes - General Purpose, SMC(DO-214AB). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownGS10M
Yangzhou Yangjie Elec Tech · Diodes - General Purpose · SMC(DO-214AB)
GS10M from Yangzhou Yangjie Elec Tech, in a SMC(DO-214AB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, the end marked by the color band; the GS10M blocks up to VRRM/VDC of 1000 V and passes IO of 10 A average. |
| 2 | A | passive | Anode, the end opposite the color band; forward current flows from here to the cathode (VF 1.1 V max at IFM=10A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SMC(DO-214AB) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive peak reverse voltage | VRRM | 1000 | V | Ta=25℃ | 1 | ||
| Maximum RMS Voltage | VRMS | 700 | V | Ta=25℃ | 1 | ||
| Maximum DC Blocking Voltage | VDC | 1000 | V | Ta=25℃ | 1 | ||
| Average Rectified Output Current | IO | 10 | A | @60Hz sine wave, Resistance load, TL (FIG.1) | 1 | ||
| Forward Surge Current (Non-repetitive) half-sine | IFSM | 200 | A | @60Hz Half-sine wave, 1 cycle, Tj=25℃ | 1 | ||
| Forward Surge Current (Non-repetitive) square | IFSM | 400 | A | @1ms, square wave, 1 cycle, Tj=25℃ | 1 | ||
| Current squared time | I2t | 166 | A2s | @1ms≤t≤8.3ms Tj=25℃ | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction Temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Maximum instantaneous forward voltage | VF | 1.1 | V | IFM=10A | 1 | ||
| Maximum DC reverse current at rated DC blocking voltage | IR | 5 | μA | Tj =25℃ | 1 | ||
| Maximum DC reverse current at rated DC blocking voltage | IR | 100 | μA | Tj =125℃ | 1 | ||
| Typical junction capacitance | Cj | 55 | pF | Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C | 1 | ||
| Typical Thermal resistance junction to ambient | RθJ-A | 50 | ℃/W | mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper pad areas | 2 | ||
| Typical Thermal resistance junction to lead | RθJ-L | 10 | ℃/W | mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper pad areas | 2 | ||
| Typical Thermal resistance junction to case | RθJ-C | 8 | ℃/W | mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper pad areas | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 | 1 |
CAD (KiCad official)
- Symbol:
GS10M - Footprint:
Diode_SMD:D_SMC - 3D model: SMC(DO-214AB) (KiCad packages3D, STEP)
- 3D model files:
gs10m-etched.step/gs10m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gs10m.step/gs10m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (4 pp, sha256
79d7c12efc6feb0f, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).