component
GP1S194HCZ0F
Public Made by Adomby adom
Sharp Microelectronics Photointerrupters - Slot Type - Transistor Output, DIP-4. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+92−8@@ -1,13 +1,102 @@ {+ "schema_version": 1,+ "type": "component", "slug": "gp1s194hcz0f",+ "title": "GP1S194HCZ0F",+ "brief": "Sharp Microelectronics Photointerrupters - Slot Type - Transistor Output, DIP-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "Sharp Microelectronics Photointerrupters - Slot Type - Transistor Output, DIP-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "sensor", "gp1s194hcz0f" ],+ "component": {+ "mpn": "GP1S194HCZ0F",+ "manufacturer": "Sharp Microelectronics",+ "package": "DIP-4",+ "pin_count": 4,+ "category": "Sensor",+ "subcategory": "Photointerrupters - Slot Type - Transistor Output",+ "datasheet": "https://wmsc.lcsc.com/wmsc/upload/file/pdf/v2/lcsc/2201111630_Sharp-Microelectronics-GP1S194HCZ0F_C691372.pdf",+ "parts": {+ "symbol": "gp1s194hcz0f.kicad_sym",+ "footprint": "gp1s194hcz0f.kicad_mod",+ "model_3d": "gp1s194hcz0f.glb",+ "model_3d_step": "gp1s194hcz0f.step",+ "lbr": "gp1s194hcz0f.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "A",+ "type": "passive",+ "description": "Anode of the infrared LED emitter (GaAs, 950nm). Forward voltage VF = 1.2V typ / 1.4V max at IF=20mA; absolute maximum forward current IF = 30mA; reverse voltage VR = 6V max. Drive through a current-limiting resistor from VCC."+ },+ {+ "number": "2",+ "name": "K",+ "type": "passive",+ "description": "Cathode of the infrared LED emitter. Typically tied to ground (through the LED path). Package outline notes this pad is at 'same voltage with Anode' on the substrate marking side."+ },+ {+ "number": "3",+ "name": "C",+ "type": "passive",+ "description": "Collector of the NPN silicon phototransistor detector. Pull to VCC through a load resistor (test condition uses RL=1k\u03a9). Absolute maximum VCEO = 35V; collector current Ic max = 20mA; typical Ic = 150-600\u03bcA at IF=5mA, VCE=5V."+ },+ {+ "number": "4",+ "name": "E",+ "type": "passive",+ "description": "Emitter of the NPN silicon phototransistor detector. Typically connected to ground; the collector-to-emitter output is taken across the load resistor. VCE(sat) = 0.4V max at IF=10mA, Ic=40\u03bcA."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://wmsc.lcsc.com/wmsc/upload/file/pdf/v2/lcsc/2201111630_Sharp-Microelectronics-GP1S194HCZ0F_C691372.pdf",+ "pages": 10,+ "sha256": "667e49079b4389cb",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 4,+ "described": 4,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "Sharp Microelectronics",+ "Package": "DIP-4",+ "Category": "Sensor",+ "Pins": "4"+ }+ },+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "gp1s194hcz0f"+ ],+ "discovery_pitch": "GP1S194HCZ0F (Sharp Microelectronics) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +114,5 @@ "docs/gp1s194hcz0f-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }