GP1S094HCZ0F

{
 "schema": "adom.pads/1",
 "slug": "gp1s094hcz0f",
 "footprint": "DIP-4_W7.62mm",
 "generated_from": {
  "footprint": "DIP-4_W7.62mm@sha256:3884cdce734b1b9d",
  "pins": "page.json:component.pins",
  "overrides": null
 },
 "pin1": {
  "pad": "1",
  "at": [
   0.0,
   0.0
  ],
  "corner": "bottom-right",
  "source": "fab-chamfer",
  "derived_from": "DIP-4_W7.62mm@sha256:3884cdce734b1b9d"
 },
 "pad_count": 4,
 "symbol_pins": [
  "1",
  "2",
  "3",
  "4"
 ],
 "paste_apertures": 0,
 "issues": [],
 "pads": [
  {
   "pad": "1",
   "kind": "thru_hole",
   "shape": "roundrect",
   "at": [
    0.0,
    0.0
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "1",
   "name": "Anode",
   "type": "passive",
   "description": "Anode of the infrared emitting diode (IRED) on the emitter side. Drive with forward current IF up to 50mA max (VF typ 1.2V, max 1.4V at IF=20mA). Use a series current-limit resistor to set IF (typical operating IF=5mA at VCE=5V).",
   "is_pin1": true,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "2",
   "kind": "thru_hole",
   "shape": "circle",
   "at": [
    0.0,
    2.54
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "2",
   "name": "Collector",
   "type": "passive",
   "description": "Collector of the NPN phototransistor on the detector side. VCEO max 35V, IC max 20mA. Typical output collector current IC = 40-400uA at VCE=5V, IF=5mA. Connect through a load resistor RL to VCC to develop the output voltage.",
   "is_pin1": false,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "3",
   "kind": "thru_hole",
   "shape": "circle",
   "at": [
    7.62,
    2.54
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "3",
   "name": "Emitter",
   "type": "passive",
   "description": "Emitter of the NPN phototransistor on the detector side. Typically tied to GND. VECO max 6V. Collector-emitter saturation voltage VCE(sat) max 0.4V at IF=10mA, IC=40uA.",
   "is_pin1": false,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  },
  {
   "pad": "4",
   "kind": "thru_hole",
   "shape": "circle",
   "at": [
    7.62,
    0.0
   ],
   "rot": 0.0,
   "size": [
    1.6,
    1.6
   ],
   "layers": [],
   "thermal": false,
   "pin": "4",
   "name": "Cathode",
   "type": "passive",
   "description": "Cathode of the infrared emitting diode (IRED) on the emitter side. Typically tied to GND (or the low side of the current-limit resistor). Peak emission wavelength 950nm (GaAs, non-coherent).",
   "is_pin1": false,
   "source": {
    "geometry": "DIP-4_W7.62mm.kicad_mod",
    "meaning": "page.json:component.pins",
    "correspondence": "kicad: symbol pin number == pad name"
   }
  }
 ]
}