component
GM45012ARMZ-R7
Public Made by Adomby adom
GONGMOSEMI Precision Op Amps, MSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGM45012ARMZ-R7
GONGMOSEMI · Precision Op Amps · MSOP-8
GM45012ARMZ-R7 from GONGMOSEMI, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUTA | output | Output A of the first amplifier channel. |
| 2 | -INA | input | Negative (inverting) input of amplifier A. |
| 3 | +INA | input | Positive (non-inverting) input of amplifier A. |
| 4 | V- | power_in | Negative power supply terminal. |
| 5 | +INB | input | Positive (non-inverting) input of amplifier B. |
| 6 | -INB | input | Negative (inverting) input of amplifier B. |
| 7 | OUTB | output | Output B of the second amplifier channel. |
| 8 | V+ | power_in | Positive power supply terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GONGMOSEMI |
| Package | MSOP-8 |
| Category | Amplifiers/Comparators |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input offset voltage | VOS | 11 | 200 | µV | VCM = 0 V to 5 V | 5 | |
| Input offset voltage over temperature | VOS | 500 | µV | −40°C ≤ TA ≤ +125°C | 5 | ||
| Input offset voltage drift | ΔVOS/ΔT | 0.6 | 3 | µV/°C | −40°C ≤ TA ≤ +125°C | 5 | |
| Input bias current | IB | 0.5 | 5 | pA | 5 | ||
| Input bias current over temperature | IB | 250 | pA | −40°C ≤ TA ≤ +125°C | 5 | ||
| Input offset current | IOS | 5 | pA | 5 | |||
| Input offset current over temperature | IOS | 250 | pA | −40°C ≤ TA ≤ +125°C | 5 | ||
| Input voltage range | 0 | 5 | V | 5 | |||
| Common-mode rejection ratio | CMRR | 80 | 103 | dB | VCM = 0 V to 5 V | 5 | |
| Common-mode rejection ratio over temperature | CMRR | 77 | dB | −40°C ≤ TA ≤ +125°C | 5 | ||
| Large-signal voltage gain | AVO | 105 | 116 | dB | VO = 0.2 V to 4.8 V, RL = 10 kΩ, VCM = 0 V | 5 | |
| Large-signal voltage gain over temperature | AVO | 95 | dB | −40°C ≤ TA ≤ +125°C | 5 | ||
| High output voltage | VOH | 4.97 | 4.99 | V | IL = 1 mA; −40°C ≤ TA ≤ +125°C | 5 | |
| Low output voltage | VOL | 4 | 30 | mV | IL = 1 mA; −40°C ≤ TA ≤ +125°C | 5 | |
| Output current | IOUT | -100 | 100 | mA | VOUT = ±0.5 V | 5 | |
| Power supply rejection ratio | PSRR | 84 | 104 | dB | VS = 2.7 V to 5.5 V | 5 | |
| Power supply rejection ratio over temperature | PSRR | 80 | dB | −40°C ≤ TA ≤ +125°C | 5 | ||
| Amplifier supply current | ISY | 0.67 | mA | VO = 0 V | 5 | ||
| Amplifier supply current over temperature | ISY | 1.1 | mA | −40°C ≤ TA ≤ +125°C | 5 | ||
| Absolute maximum power supply voltage | V+ - V- | 6 | V | 4 | |||
| Differential input voltage | -6 | 6 | V | 4 | |||
| ESD HBM | 2 | kV | HBM | 4 | |||
| Storage temperature range | -65 | 150 | °C | 4 | |||
| Junction temperature range | -40 | 125 | °C | 4 | |||
| Soldering temperature | 260 | °C | 4 | ||||
| Thermal resistance junction to ambient, 8-pin MSOP | θJA | 210 | °C/W | worst case, surface-mount on board | 4 | ||
| Thermal resistance junction to case, 8-pin MSOP | θJC | 45 | °C/W | 4 | |||
| Input capacitance differential | CIN | 6 | pF | differential | 5 | ||
| Input capacitance common-mode | CIN | 12 | pF | common-mode | 5 | ||
| Input voltage noise density | en | 6 | nV/√Hz | f = 1 kHz | 5 | ||
| Input voltage noise density | en | 2.7 | nV/√Hz | f = 10 kHz | 5 | ||
| Low-frequency noise | 2 | µVpp | f = 0.1 Hz to 10 Hz | 5 | |||
| Total harmonic distortion plus noise | THD + N | 0.00044 | % | G = 1, RL = 10 kΩ, f = 1 kHz, VIN = 2 V p-p, 80 kHz BW | 5 | ||
| Total harmonic distortion plus noise | THD + N | -107 | dB | G = 1, RL = 10 kΩ, f = 1 kHz, VIN = 2 V p-p, 80 kHz BW | 5 | ||
| Gain bandwidth product | GBP | 10 | MHz | 5 | |||
| Slew rate | SR | 4.7 | V/µs | RL = 10 kΩ | 5 | ||
| Settling time | tS | 1 | µs | To 0.1%, VIN = 0 V to 2 V step, G = +1 | 5 | ||
| Phase margin | ΦM | 54 | deg | 5 |
CAD (KiCad official)
- Symbol:
GM45012ARMZ-R7 - Footprint:
Package_SO:MSOP-8_3x3mm_P0.65mm - 3D model: MSOP-8 (KiCad packages3D, STEP)
- 3D model files:
gm45012armz-r7-etched.step/gm45012armz-r7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gm45012armz-r7.step/gm45012armz-r7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GONGMOSEMI datasheet (16 pp, sha256
d32328def41a88c0, retrieved 2026-10-27, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).