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GM12045ARDZ-3.3-R7
Public Made by Adomby adom
GONGMOSEMI Voltage Regulators - Linear, Low Drop Out (LDO) Regulators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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GM12045ARDZ-3.3-R7
GONGMOSEMI · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · SOIC-8
GM12045ARDZ-3.3-R7 from GONGMOSEMI, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | OUT | power_out | Regulated output pin; a ceramic capacitor of 10 µF or more must be placed between OUT and GND, as close to the pin as possible, for stability. |
| 2 | SENSE/ADJ | input | Feedback pin to the error amplifier; SENSE is used for fixed-output versions, while in the adjustable version the ADJ pin sits at 1.21 V relative to GND with an external output range of 1.21 V to 20 V. |
| 3 | GND | power_in | Ground pin. |
| 4 | NC | unconnected | Not connected. |
| 5 | SHDN | input | Shutdown pin: pulling it high enables the device and pulling it low disables it; if the enable function is not needed, it must be connected to IN. |
| 6 | GND | power_in | Ground pin. |
| 7 | GND | power_in | Ground pin. |
| 8 | IN | power_in | Input pin with an operating input voltage range of 1.9 V to 20 V; a ceramic input capacitor of 10 µF or more should be placed as close to the pin as possible to lower input impedance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GONGMOSEMI |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| IN UVLO rising threshold | VUVLO_RISING | 1.75 | 1.89 | V | VIN 上升 | 7 | |
| IN UVLO falling threshold | VUVLO_FALLING | 1.55 | 1.68 | V | VIN 下降 | 7 | |
| GND pin current | IGND | 0.9 | 1.7 | mA | ILOAD = 0mA | 7 | |
| GND pin current | IGND | 1.4 | 2.2 | mA | ILOAD = 100mA | 7 | |
| GND pin current | IGND | 1.9 | 2.9 | mA | ILOAD = 500mA | 7 | |
| Shutdown current | ISHUTDOWN | 0.9 | 10 | µA | VIN = 6V, VSHDN = 0V, TJ = 25°C | 7 | |
| Fixed output voltage accuracy | VSENSE | -2 | 2 | % | 最大值(VOUT + 0.5V, 1.9 V) < VIN < 20V, 1mA < ILOAD < 500mA | 7 | |
| Input voltage regulation | ΔVOUT_LINE | 2 | 8 | mV | VIN = 最大值(VOUT + 0.5V, 1.9 V) to 20 V, ILOAD = 10mA | 7 | |
| Load regulation | ΔVOUT_LOAD | 3 | 12 | mV | 1 mA ≤ IOUT ≤ 500 mA | 7 | |
| Dropout voltage | VDO | 70 | 146 | mV | VIN = 3.3 V, IOUT = 100 mA, VFB = 0.5 V, 3% | 7 | |
| Dropout voltage | VDO | 90 | 170 | mV | VIN = 3.3 V, IOUT = 500 mA, VFB = 0.5 V, 3% | 7 | |
| SHDN pin low-level input voltage | VSHDN_IL | 0.49 | 0.75 | V | 7 | ||
| SHDN pin high-level input voltage | VSHDN_IH | 0.79 | 1.1 | V | 7 | ||
| SHDN pin current | ISHDN | 50 | 750 | µA | VIN = 20 V, TJ = 25°C | 7 | |
| Output current limit | ILIM | 2.2 | A | VOUT 外加 0.9 × VOUT(nom), VIN = VOUT(nom) + 0.5 V | 7 | ||
| Power supply ripple rejection | PSRR | 81 | dB | f = 100 Hz, VOUT - VOUT = 1 V, ILOAD = 500 mA | 7 | ||
| Power supply ripple rejection | PSRR | 77 | dB | f = 10 kHz, VOUT - VOUT = 1 V, ILOAD = 500 mA | 7 | ||
| Output voltage noise | VN | 8.8 | μVRMS | 带宽 = 10 Hz to 100 kHz, IOUT = 500 mA | 7 | ||
| Thermal shutdown temperature | TSD | 155 | °C | 关机阈值,温度上升 | 7 | ||
| Thermal shutdown hysteresis | TSD_HYS | 15 | °C | 开机阈值,温度下降 | 7 | ||
| IN, SHDN pins to GND voltage | -0.3 | 22 | V | 6 | |||
| OUT pin to GND voltage | -0.3 | 22 | V | 6 | |||
| SENSE/ADJ pin to GND voltage | -0.3 | 6 | V | 6 | |||
| Storage temperature range | -65 | 150 | °C | 6 | |||
| Operating temperature range | -40 | 125 | °C | 6 | |||
| Junction-to-ambient thermal resistance, 8-pin SOIC | θJA | 67 | °C/W | 8 引脚 SOIC | 6 | ||
| Junction-to-ambient thermal resistance, JEDEC 51-7 four-layer board | θJA | 46.4 | °C/W | SOIC-8, JEDEC 51-7 高有效导热四层测试板, TA = 25°C | 12 | ||
| Input voltage operating range | VIN | 1.9 | 20 | V | 12 | ||
| Output capacitor | COUT | 10 | µF | ESR ≤ 3Ω, X5R 或 X7R 电介质 (布局指南) | 12 | ||
| Maximum continuous operating junction temperature | TJ | 125 | °C | 连续运行 | 11 |
CAD (KiCad official)
- Symbol:
GM12045ARDZ-3.3-R7 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
gm12045ardz-3-3-r7-etched.step/gm12045ardz-3-3-r7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gm12045ardz-3-3-r7.step/gm12045ardz-3-3-r7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GONGMOSEMI datasheet (15 pp, sha256
31f8ffb5963aef61, retrieved 2026-10-19, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).