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Contents

README

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GM1203AACPZ-1-R7

GONGMOSEMI · Voltage Regulators - Linear, Low Drop Out (LDO) Regulators · QFN-20-EP(3.5x3.5)

GM1203AACPZ-1-R7 from GONGMOSEMI, in a QFN-20-EP(3.5x3.5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 OUT power_out Regulated output pin; a ceramic capacitor of 47 µF or greater from this pin to GND, placed as close to the pin as possible, is required for stability.
2 SNS passive Output sense pin connected to the output through an internal R0 resistor; connect it to the load side of the output only when the VOUT programming function is used, otherwise leave it floating.
3 FB input Feedback pin to the error amplifier; a 10 nF feed-forward capacitor from FB to OUT, placed as close to the device as possible, is recommended for best AC performance.
4 PG output Open-drain power-good output (active high) that indicates the output has reached the PG rising threshold; an external pull-up of 10 kΩ to 100 kΩ is recommended and PG sink current is limited to -5 mA in absolute maximum ratings.
5 50mV passive VOUT programming pin tied to the internal feedback network; connect to GND, SNS or leave floating to set the output voltage, with GND adding 50 mV to the output.
6 100mV passive VOUT programming pin tied to the internal feedback network; connect to GND, SNS or leave floating, with GND adding 100 mV to the output.
7 200mV passive VOUT programming pin tied to the internal feedback network; connect to GND, SNS or leave floating, with GND adding 200 mV to the output.
8 GND power_in Ground pin that must be connected with low impedance to the other GND pin and the exposed pad.
9 400mV passive VOUT programming pin tied to the internal feedback network; connect to GND, SNS or leave floating, with GND adding 400 mV to the output.
10 800mV passive VOUT programming pin tied to the internal feedback network; connect to GND, SNS or leave floating, with GND adding 800 mV to the output.
11 1.6V passive VOUT programming pin tied to the internal feedback network; connect to GND, SNS or leave floating, with GND adding 1.6 V to the output.
12 BIAS power_in Bias supply pin that reduces power dissipation at low input and output voltages and improves DC and AC performance when VIN ≤ 2.2 V; a 10 µF or greater capacitor to GND is required, and the pin must be left floating or grounded if unused.
13 NR/SS passive Noise reduction and soft-start pin; an external capacitor to GND lowers reference noise and sets the soft-start time, with 10 nF or greater recommended close to the pin.
14 EN input Enable pin: driving it high enables the device and driving it low disables it, with thresholds of 0.4 V maximum (low) and 1.1 V minimum (high); it must be tied to IN or BIAS if enable control is not used.
15 IN power_in Input supply pin with a operating range of 1.1 V to 6.5 V; a 10 µF or greater ceramic capacitor (at least 5 µF) from IN to GND, placed as close to the pin as possible, is required.
16 IN power_in Input supply pin with an operating range of 1.1 V to 6.5 V; connect with the input capacitor placed as close to the pin as possible.
17 IN power_in Input supply pin with an operating range of 1.1 V to 6.5 V; connect with the input capacitor placed as close to the pin as possible.
18 GND power_in Ground pin that must be connected with low impedance to the other GND pin and the exposed pad.
19 OUT power_out Regulated output pin; connect to the 47 µF or greater ceramic output capacitor to GND as close to the pin as possible.
20 OUT power_out Regulated output pin; connect to the 47 µF or greater ceramic output capacitor to GND as close to the pin as possible.
21 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GONGMOSEMI
Package QFN-20-EP(3.5x3.5)
Category Power Management (PMIC)
Pins 21

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output voltage range, pin-programmed (GM1203A) VFB 0.5 3.65 V GM1203A, 使用引脚编程 9
Output voltage range, external resistor divider (GM1203A) VFB 0.5 5.5 V GM1203A, 使用外部电阻(2), 不包括外部电阻容差 9
Output voltage accuracy -1 1 % 0.5 V ≤ VOUT ≤ 3.65 V, 5 mA ≤ IOUT ≤ 3 A, over VIN 9
Output voltage accuracy with BIAS -1 1.3 % VIN = 1.1 V, VOUT = 0.5V, 5 mA ≤ IOUT ≤ 3 A, 3.0 V ≤ VBIAS ≤ 6.5 V 9
Output current limit (3A variant, excludes -3-R7 4A row) ILIM 3.7 4.2 6.7 A VOUT 外加 0.9 × VOUT(nom), VIN = VOUT(nom) + 0.4 V 9
EN pin high-level input voltage VEN_IH 1.1 6.5 V 9
EN pin low-level input voltage VEN_IL 0 0.4 V 9
EN pin current IEN -0.1 0.1 µA VIN = 6.5 V, VEN = 0 V and 6.5 V 9
PG falling threshold VPG_FALLING 82 91 93 % × VOUT PG 引脚阈值 下降 9
Shutdown ground pin current (typical) IGND 18 µA 关断, VIN = 6.5 V, VEN = 0.5 V 9
Dropout voltage, 3A, VIN = 1.5 V VDO 140 260 mV VIN = 1.5 V, IOUT = 3 A, 0.9 × VOUT(nom) 9
Dropout voltage, 3A, VIN = 5.4 V VDO 115 220 mV VIN = 5.4 V, IOUT = 3 A, 0.9 × VOUT(nom) 9
Dropout voltage, 3A, VIN = 1.1 V, VBIAS = 5 V VDO 120 210 mV VIN = 1.1 V, VBIAS = 5 V, IOUT = 3 A, 0.9 × VOUT(nom) 9
FB pin leakage current IFB -100 100 nA VIN = 6.5 V 10
NR/SS charging current INR/SS 4 9 11.5 µA VNR/SS = GND, VIN = 6.5 V 10
Thermal shutdown threshold (typical) TSD 150 °C 关断阈值,温度不断上升 10
Thermal shutdown hysteresis (typical) TSD_HYS 20 °C 开机阈值,温度不断下降 10
IN, BIAS, PG, EN to GND voltage -0.3 7 V 8
SNS, OUT to GND voltage (upper limit printed as VIN+0.3 V) -0.3 V upper limit printed as VIN + 0.3 V 8
NR/SS, FB to GND voltage -0.3 3.6 V 8
Output-setting pins to GND voltage (upper limit printed as VOUT+0.3 V) -0.3 V upper limit printed as VOUT + 0.3 V 8
PG current -5 mA 8
Storage temperature range -65 150 °C 8
Operating temperature range (GM1203AACPZ grade) -40 125 °C -40°C to +125°C grade per ordering guide (M grade is -55 to +125) 8
Thermal resistance junction-to-ambient, 20-pin 3.5 mm × 3.5 mm QFN θJA 43.4 °C/W 20-pin 3.5 mm × 3.5 mm QFN, worst case, surface-mount on board 8
Continuous operating junction temperature TJ 125 °C for reliable continuous operation 20
Input voltage with BIAS applied VIN 1.1 6.5 V VBIAS applied (≥3 V when VIN < 1.5 V) 18
Input voltage without BIAS VIN 1.5 6.5 V BIAS floating or grounded 1
BIAS supply voltage when VIN < 1.5 V VBIAS 3 V VIN < 1.5 V 18
Input capacitor, IN to GND CIN 10 µF ceramic, close to IN pins 6
BIAS capacitor, BIAS to GND CBIAS 10 µF BIAS pin used 6
Output capacitor, OUT to GND (effective) COUT 47 µF ceramic, effective capacitance ≥22 µF 18

CAD (KiCad official)

  • Symbol: GM1203AACPZ-1-R7
  • Footprint: Package_DFN_QFN:QFN-20-1EP_3.5x3.5mm_P0.5mm_EP2x2mm
  • 3D model: QFN-20-EP(3.5x3.5), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: gm1203aacpz-1-r7-etched.step / gm1203aacpz-1-r7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gm1203aacpz-1-r7.step / gm1203aacpz-1-r7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GONGMOSEMI datasheet (25 pp, sha256 f744d3090b584d94, retrieved 2026-10-19, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF