component
GL25N40A8
Public Made by Adomby adom
GL MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGL25N40A8
GL · MOSFETs · TO-220
GL25N40A8 from GL, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS(TH) of 2.0 to 4.0 V at VDS=VGS, ID=250µA and an absolute maximum VGS of ±30 V. |
| 2 | D | passive | Drain; withstands VDSS of 400 V and carries continuous ID of 25 A (17.5 A at TC=100 °C), pulsed IDM 100 A; connected to the tab per the TO-220 outline. |
| 3 | S | passive | Source; current return of the channel, with body diode continuous current ISD of 25 A and pulsed 100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GL |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 400 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 25 | A | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 17.5 | A | TC=100 °C | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAs | 1850 | mJ | L=10mH, ID=19A, Start TJ=25℃ | 1 | ||
| Avalanche Energy, Repetitive | EAr | 155 | mJ | 1 | |||
| Avalanche Current | IAR | 25 | A | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD=25A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 250 | W | Tc=25℃ | 1 | ||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 0.5 | ℃/ W | 2 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | ℃/ W | 2 | |||
| Drain to Source Breakdown Voltage | VDSS | 400 | V | VGS=0V,ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS=400V, VGS=0V,Ta=25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS=320V, VGS=0V,Ta=125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.13 | 0.155 | Ω | VGS=10V,ID=12.5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS,ID=250µA | 2 | |
| Diode Continuous Source Current | ISD | 25 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 100 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=25A,VGS=0V | 3 | ||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.53 | V/℃ | ID=250uA,Reference25℃ | 2 | ||
| Forward Trans conductance | gfs | 16 | S | VDS=15V,ID=12.5A | 2 | ||
| Input Capacitance | Ciss | 2650 | pF | VGS=0V VDS=25V f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 320 | pF | VGS=0V VDS=25V f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 25 | pF | VGS=0V VDS=25V f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 35 | ns | ID=25A,VDD=200V,VGS=10V,Rg=25Ω | 2 | ||
| Rise Time | tr | 71 | ns | ID=25A,VDD=200V,VGS=10V,Rg=25Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 160 | ns | ID=25A,VDD=200V,VGS=10V,Rg=25Ω | 2 | ||
| Fall Time | tf | 72 | ns | ID=25A,VDD=200V,VGS=10V,Rg=25Ω | 2 | ||
| Total Gate Charge | Qg | 60 | nC | ID=25A,VDD=200V,VGS=10V | 2 | ||
| Gate to Source Charge | Qgs | 12 | nC | ID=25A,VDD=200V,VGS=10V | 2 | ||
| Gate to Drain (Miller) Charge | Qgd | 19 | nC | ID=25A,VDD=200V,VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 303 | ns | IS=25A,Tj=25℃,dIF/dt=100A/μs,VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 1867 | μC | IS=25A,Tj=25℃,dIF/dt=100A/μs,VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
GL25N40A8 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
gl25n40a8-etched.step/gl25n40a8-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gl25n40a8.step/gl25n40a8.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GL datasheet (5 pp, sha256
20897f3525ee9103, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).