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Contents

README

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GL10NP06V-D8

GL · MOSFETs · SOP-8

GL10NP06V-D8 from GL, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1, pin 1 at the dimple corner of the SOP-8 top view.
2 G1 input Gate of MOSFET 1, with a VGS rating of ±20V.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2, with a VGS rating of ±20V.
5 D2 passive Drain of MOSFET 2, tied to pin 6.
6 D2 passive Drain of MOSFET 2, tied to pin 5.
7 D1 passive Drain of MOSFET 1, tied to pin 8.
8 D1 passive Drain of MOSFET 1, tied to pin 7.

Key specifications

Parameter Value
Manufacturer GL
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Channel) VDS 60 V 1
Drain-Source Voltage (P-Channel) VDS -60 V 1
Gate-Source Voltage (N-Channel) VGS -20 20 V 1
Gate-Source Voltage (P-Channel) VGS -20 20 V 1
Continuous Drain Current (N-Channel) ID 10 A TC=25℃ 1
Continuous Drain Current (P-Channel) ID -10 A TC=25℃ 1
Continuous Drain Current (N-Channel) ID 7 A TC=100℃ 1
Continuous Drain Current (P-Channel) ID -7 A TC=100℃ 1
Pulsed Drain Current (N-Channel) IDM 40 A Note 1 1
Pulsed Drain Current (P-Channel) IDM -40 A Note 1 1
Maximum Power Dissipation PD 2 W TC=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 75 ℃/W Note 2 2
Drain-Source Breakdown Voltage (N-Channel) BVDSS 60 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current (N-Channel) IDSS 1 μA VDS=60V,VGS=0V 2
Gate-Body Leakage Current (N-Channel) IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage (N-Channel) VGS(th) 1 2.5 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (N-Channel) RDS(ON) 15 18 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance (N-Channel) RDS(ON) 18 25 mΩ VGS=4.5V, ID=6A 2
Forward Transconductance (N-Channel) gFS 8 S VDS=5V,ID=10A 2
Diode Forward Current (N-Channel) IS 6 A Note 2 3
Drain-Source Breakdown Voltage (P-Channel) BVDSS -60 V VGS=0V ID=-250μA 3
Zero Gate Voltage Drain Current (P-Channel) IDSS -1 μA VDS=-60V,VGS=0V 3
Gate-Body Leakage Current (P-Channel) IGSS -100 100 nA VGS=±20V,VDS=0V 3
Gate Threshold Voltage (P-Channel) VGS(th) -1 -3 V VDS=VGS,ID=-250μA 3
Drain-Source On-State Resistance (P-Channel) RDS(ON) 60 75 mΩ VGS=-10V, ID=-10A 3
Drain-Source On-State Resistance (P-Channel) RDS(ON) 70 100 mΩ VGS=-4.5V, ID=-6A 3
Forward Transconductance (P-Channel) gFS 6 S VDS=-5V,ID=-10A 3
Diode Forward Current (P-Channel) IS -6 A Note 2 4

CAD (KiCad official)

  • Symbol: GL10NP06V-D8
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: gl10np06v-d8-etched.step / gl10np06v-d8-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gl10np06v-d8.step / gl10np06v-d8.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GL datasheet (8 pp, sha256 eceb3abdca69f2a6, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF