component
GF1M
Public Made by Adomby adom
onsemi Diodes - General Purpose, SMA(DO-214AC). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GF1M
onsemi · Diodes - General Purpose · SMA(DO-214AC)
GF1M from onsemi, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the SMA/DO-214AC package; the GF1M is rated for VRRM of 1000 V. |
| 2 | A | passive | Anode of the glass passivated rectifier; average rectified forward current is 1.0 A at TL = 125°C and forward voltage is 1.2 V at 1.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | 1.2 | V | @ 1.0 A | 2 | ||
| Reverse Recovery Time | trr | 2 | µs | IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A | 2 | ||
| Reverse Current | IR | 5 | µA | @ rated VR, TA = 25°C | 2 | ||
| Reverse Current | IR | 50 | µA | @ rated VR, TA = 125°C | 2 | ||
| Total Capacitance | CT | 15 | pF | VR = 4.0 V, f = 1.0 MHz | 2 | ||
| Maximum Repetitive Reverse Voltage | VRRM | 1000 | V | TA = 25°C | 2 | ||
| Average Rectified Forward Current | IF(AV) | 1 | A | @ TL = 125°C | 2 | ||
| Non-repetitive Peak Forward Surge Current | IFSM | 30 | A | 8.3 ms Single Half-Sine-Wave | 2 | ||
| Storage Temperature Range | Tstg | -65 | 175 | °C | 2 | ||
| Operating Junction Temperature | TJ | -65 | 175 | °C | 2 | ||
| Power Dissipation | PD | 1.8 | W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 80 | °C/W | Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 26 | °C/W | Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas | 2 |
CAD (KiCad official)
- Symbol:
GF1M - Footprint:
Diode_SMD:D_SMA - 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files:
gf1m-etched.step/gf1m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gf1m.step/gf1m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
3daa5a2609801b7c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GF1M
**onsemi** · Diodes - General Purpose · SMA(DO-214AC)
GF1M from onsemi, in a SMA(DO-214AC). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode, marked by the color band on the SMA/DO-214AC package; the GF1M is rated for VRRM of 1000 V. |
| 2 | A | passive | Anode of the glass passivated rectifier; average rectified forward current is 1.0 A at TL = 125°C and forward voltage is 1.2 V at 1.0 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SMA(DO-214AC) |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage | VF | | | 1.2 | V | @ 1.0 A | 2 |
| Reverse Recovery Time | trr | | | 2 | µs | IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A | 2 |
| Reverse Current | IR | | | 5 | µA | @ rated VR, TA = 25°C | 2 |
| Reverse Current | IR | | | 50 | µA | @ rated VR, TA = 125°C | 2 |
| Total Capacitance | CT | | | 15 | pF | VR = 4.0 V, f = 1.0 MHz | 2 |
| Maximum Repetitive Reverse Voltage | VRRM | | | 1000 | V | TA = 25°C | 2 |
| Average Rectified Forward Current | IF(AV) | | | 1 | A | @ TL = 125°C | 2 |
| Non-repetitive Peak Forward Surge Current | IFSM | | | 30 | A | 8.3 ms Single Half-Sine-Wave | 2 |
| Storage Temperature Range | Tstg | -65 | | 175 | °C | | 2 |
| Operating Junction Temperature | TJ | -65 | | 175 | °C | | 2 |
| Power Dissipation | PD | | | 1.8 | W | | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 80 | °C/W | Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas | 2 |
| Thermal Resistance, Junction to Lead | RθJL | | | 26 | °C/W | Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas | 2 |
## CAD (KiCad official)
- Symbol: `GF1M`
- Footprint: `Diode_SMD:D_SMA`
- 3D model: SMA(DO-214AC) (KiCad packages3D, STEP)
- 3D model files: `gf1m-etched.step` / `gf1m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gf1m.step` / `gf1m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/gf1m-d.pdf) (5 pp, sha256 `3daa5a2609801b7c`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gf1m-datasheet.pdf)