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Contents

README

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GDSSF2300

Suzhou Good Ark Elec · MOSFETs · SOT-23

GDSSF2300 from Suzhou Good Ark Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS up to ±8 V maximum, device operates with gate voltages as low as 2.5 V and has a threshold of 0.65 to 1.2 V.
2 S passive Source; body-diode forward current IS is 0.94 A and continuous drain current is 2.4 A at 25°C.
3 D passive Drain; drain-source voltage is rated 20 V with continuous drain current of 2.4 A and pulsed 10 A.

Key specifications

Parameter Value
Manufacturer Suzhou Good Ark Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -8 8 V 1
Drain Current-Continuous ID 2.4 A 25℃ 1
Drain Current-Pulsed IDM 10 A Note 1 1
Maximum Power Dissipation PD 0.9 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 140 ℃/W Note 2: surface mounted on 1in2 FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 1
Gate-Body Leakage Current IGSS -100 100 nA VGS=±8V, VDS=0V 1
Gate Threshold Voltage VGS(th) 0.65 0.95 1.2 V VDS=VGS, ID=250μA 1
Drain-Source On-State Resistance RDS(ON) 68 110 mΩ VGS=2.5V, ID=3.1A 2
Drain-Source On-State Resistance RDS(ON) 42 55 mΩ VGS=4.5V, ID=3.6A 2
Turn-on Delay Time td(on) 7 15 nS VDD=10V, RL=2.8Ω, VGS=4.5V, RGEN=6Ω, ID=3.6A 2
Turn-on Rise Time tr 55 80 nS VDD=10V, RL=2.8Ω, VGS=4.5V, RGEN=6Ω, ID=3.6A 2
Turn-Off Delay Time td(off) 16 60 nS VDD=10V, RL=2.8Ω, VGS=4.5V, RGEN=6Ω, ID=3.6A 2
Turn-Off Fall Time tf 10 25 nS VDD=10V, RL=2.8Ω, VGS=4.5V, RGEN=6Ω, ID=3.6A 2
Total Gate Charge Qg 4 10 nC VDS=10V, ID=3.6A, VGS=4.5V 2
Diode Forward Voltage VSD 0.76 1.2 V VGS=0V, IS=0.94A 2
Diode Forward Current IS 0.94 A Note 2 2
Forward Transconductance gFS 8 S VDS=5V, ID=3.6A 2
Gate-Source Charge Qgs 0.65 nC VDS=10V, ID=3.6A, VGS=4.5V 2
Gate-Drain Charge Qgd 1.5 nC VDS=10V, ID=3.6A, VGS=4.5V 2
Input Capacitance Clss 300 pF VDS=10V, VGS=0V, F=1.0MHz 2
Output Capacitance Coss 120 pF VDS=10V, VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 80 pF VDS=10V, VGS=0V, F=1.0MHz 2

CAD (KiCad official)

  • Symbol: GDSSF2300
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: gdssf2300-etched.step / gdssf2300-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gdssf2300.step / gdssf2300.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Suzhou Good Ark Elec datasheet (6 pp, sha256 8efd7deb8690b0f7, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF