component
GD32E230K6U6
Public Made by Adomby adom
GigaDevice Semicon Beijing Microcontrollers (MCU/MPU/SOC), QFN-32-EP(5x5). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
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| gd32e230k6u6-etched.step | 7d ago |
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GD32E230K6U6
GigaDevice Semicon Beijing · Microcontrollers (MCU/MPU/SOC) · QFN-32-EP(5x5)
GD32E230K6U6 from GigaDevice Semicon Beijing, in a QFN-32-EP(5x5). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Main digital supply pin (default function VDD); the datasheet gives no further limits for this pin in the provided text. |
| 2 | PF0-OSCIN | bidirectional | 5 V tolerant GPIO PF0 with alternate function I2C0_SDA and additional function OSCIN (external high-speed oscillator input). |
| 3 | PF1-OSCOUT | bidirectional | 5 V tolerant GPIO PF1 with alternate function I2C0_SCL and additional function OSCOUT (external high-speed oscillator output). |
| 4 | NRST | bidirectional | Reset pin (default function NRST); the datasheet lists it as I/O, with electrical limits given in the NRST pin characteristics section, which is not in the provided text. |
| 5 | VDDA | power_in | Analog supply pin (default function VDDA) for the ADC and other analog circuits; no further limits are given in the provided text. |
| 6 | PA0-WKUP | bidirectional | GPIO PA0 with alternates USART0_CTS, USART1_CTS, CMP_OUT and I2C1_SCL, additional ADC_IN0, CMP_IM6, RTC_TAMP1 and WKUP0 wakeup function. |
| 7 | PA1 | bidirectional | GPIO PA1 with alternates USART0_RTS, USART1_RTS, I2C1_SDA, EVENTOUT and TIMER14_CH0_ON (device-dependent), additional ADC_IN1 and CMP_IP. |
| 8 | PA2 | bidirectional | GPIO PA2 with alternates USART0_TX, USART1_TX and TIMER14_CH0 (device-dependent), additional ADC_IN2 and CMP_IM7. |
| 9 | PA3 | bidirectional | GPIO PA3 with alternates USART0_RX, USART1_RX and TIMER14_CH1 (device-dependent), additional ADC_IN3. |
| 10 | PA4 | bidirectional | GPIO PA4 with alternates SPI0_NSS/I2S0_WS, USART0_CK, USART1_CK, TIMER13_CH0 and SPI1_NSS (device-dependent), additional ADC_IN4 and CMP_IM4. |
| 11 | PA5 | bidirectional | GPIO PA5 with alternates SPI0_SCK and I2S0_CK, additional ADC_IN5 and CMP_IM5. |
| 12 | PA6 | bidirectional | GPIO PA6 with alternates SPI0_MISO/I2S0_MCK, TIMER2_CH0, TIMER0_BRKIN, TIMER15_CH0, EVENTOUT and CMP_OUT, additional ADC_IN6. |
| 13 | PA7 | bidirectional | GPIO PA7 with alternates SPI0_MOSI/I2S0_SD, TIMER2_CH1, TIMER13_CH0, TIMER0_CH0_ON, TIMER16_CH0 and EVENTOUT, additional ADC_IN7. |
| 14 | PB0 | bidirectional | GPIO PB0 with alternates TIMER2_CH2, TIMER0_CH1_ON, USART1_RX (device-dependent) and EVENTOUT, additional ADC_IN8. |
| 15 | PB1 | bidirectional | GPIO PB1 with alternates TIMER2_CH3, TIMER13_CH0, TIMER0_CH2_ON and SPI1_SCK (device-dependent), additional ADC_IN9. |
| 16 | PB2 | bidirectional | 5 V tolerant GPIO PB2 with alternate function TIMER2_ETI. |
| 17 | VDD | power_in | Digital supply pin (default function VDD); no further limits are given in the provided text. |
| 18 | PA8 | bidirectional | 5 V tolerant GPIO PA8 with alternates USART0_CK, TIMER0_CH0, CK_OUT, USART1_TX (device-dependent) and EVENTOUT. |
| 19 | PA9 | bidirectional | 5 V tolerant GPIO PA9 with alternates USART0_TX, TIMER0_CH1, I2C0_SCL and CK_OUT; PA9/PA10 pair can be remapped to PA11/PA12 via SYSCFG_CFG0. |
| 20 | PA10 | bidirectional | 5 V tolerant GPIO PA10 with alternates USART0_RX, TIMER0_CH2, TIMER16_BRKIN and I2C0_SDA; PA9/PA10 pair can be remapped to PA11/PA12 via SYSCFG_CFG0. |
| 21 | PA11 | bidirectional | 5 V tolerant GPIO PA11 with alternates USART0_CTS, TIMER0_CH3, CMP_OUT, EVENTOUT, SPI1_IO2, I2C0_SMBA and I2C1_SCL (remap of PA9/PA10 pair). |
| 22 | PA12 | bidirectional | 5 V tolerant GPIO PA12 with alternates USART0_RTS, TIMER0_ETI, EVENTOUT, SPI1_IO3, I2C0_TXFRAME and I2C1_SDA (remap of PA9/PA10 pair). |
| 23 | PA13 | bidirectional | 5 V tolerant GPIO PA13 defaulting to SWDIO, with alternates IFRP_OUT and SPI1_MISO. |
| 24 | PA14 | bidirectional | 5 V tolerant GPIO PA14 defaulting to SWCLK, with alternates USART0_TX, USART1_TX (device-dependent) and SPI1_MOSI. |
| 25 | PA15 | bidirectional | 5 V tolerant GPIO PA15 with alternates SPI0_NSS/I2S0_WS, USART0_RX, USART1_RX (device-dependent), SPI1_NSS and EVENTOUT. |
| 26 | PB3 | bidirectional | 5 V tolerant GPIO PB3 with alternates SPI0_SCK/I2S0_CK and EVENTOUT. |
| 27 | PB4 | bidirectional | 5 V tolerant GPIO PB4 with alternates SPI0_MISO/I2S0_MCK, TIMER2_CH0, EVENTOUT, I2C0_TXFRAME and TIMER16_BRKIN. |
| 28 | PB5 | bidirectional | 5 V tolerant GPIO PB5 with alternates SPI0_MOSI/I2S0_SD, I2C0_SMBA, TIMER15_BRKIN and TIMER2_CH1, additional WKUP5 wakeup function. |
| 29 | PB6 | bidirectional | 5 V tolerant GPIO PB6 with alternates I2C0_SCL, USART0_TX and TIMER15_CH0_ON. |
| 30 | PB7 | bidirectional | 5 V tolerant GPIO PB7 with alternates I2C0_SDA, USART0_RX and TIMER16_CH0_ON. |
| 31 | BOOT0 | input | Boot mode selection input (default function BOOT0). |
| 32 | PB8 | bidirectional | 5 V tolerant GPIO PB8 with alternates I2C0_SCL and TIMER15_CH0. |
| 33 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GigaDevice Semicon Beijing |
| Package | QFN-32-EP(5x5) |
| Category | Embedded Processors & Controllers |
| Pins | 33 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage on other I/O | VIN | 3.6 | V | 43 | |||
| Input voltage on 5V tolerant pin, maximum (note 3) | VIN | 6.5 | V | 43 | |||
| Variations between different VDD power pins | /ΔVDDx/ | 50 | mV | 43 | |||
| Variations between different ground pins | /VSSX −VSS/ | 50 | mV | 43 | |||
| Maximum current for GPIO pins | IIO | -25 | 25 | mA | 43 | ||
| Operating temperature range | TA | -40 | 85 | °C | 43 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 43 | ||
| Maximum junction temperature | TJ | 125 | °C | 43 | |||
| Supply voltage | VDD | 1.8 | 3.3 | 3.6 | V | 43 | |
| Analog supply voltage | VDDA | 1.8 | 3.3 | 3.6 | V | ADC not used | 43 |
| Analog supply voltage | VDDA | 2.4 | 3.3 | 3.6 | V | ADC used | 43 |
| AHB1 clock frequency | fHCLK1 | 0 | 72 | MHz | 44 | ||
| Charge device model ESD voltage | VESD(CDM) | 2000 | V | TA = 25 °C; JESD22-C101 | 52 | ||
| Human body model ESD voltage | VESD(HBM) | 6000 | V | TA = 25 °C; JESD22-A114 | 52 | ||
| Static latch-up I-test | LU I-test | -200 | 200 | mA | TA = 25 °C; JESD78 | 52 | |
| Static latch-up supply overvoltage | 5.4 | V | 52 | ||||
| Crystal or ceramic frequency | fHXTAL | 4 | 8 | 32 | MHz | VDD = 3.3 V | 52 |
| Crystal or ceramic duty cycle | Ducy(HXTAL) | 30 | 50 | 70 | % | 52 | |
| External clock source or oscillator frequency (HXTAL bypass) | fHXTAL_ext | 1 | 8 | 50 | MHz | VDD = 3.3 V | 52 |
| Crystal or ceramic duty cycle (LXTAL) | Ducy(LXTAL) | 30 | 70 | % | 53 | ||
| External clock source or oscillator frequency (LXTAL bypass) | fLXTAL_ext | 32.768 | 1000 | kHz | VDD = 3.3 V | 54 | |
| IRC8M oscillator frequency accuracy, factory-trimmed | ACCIRC8M | -4 | 5 | % | VDD = VDDA = 3.3 V, TA = -40 °C ~ +85 °C | 54 | |
| IRC8M oscillator frequency accuracy, factory-trimmed | ACCIRC8M | -2 | 2 | % | VDD = VDDA = 3.3 V, TA = 0 °C ~ +85 °C | 54 | |
| IRC8M oscillator frequency accuracy, factory-trimmed | ACCIRC8M | -1 | 1 | % | VDD = VDDA = 3.3 V, TA = 25°C | 54 | |
| IRC8M oscillator duty cycle | DIRC8M | 45 | 50 | 55 | % | VDD = VDDA = 3.3 V, fIRC8M = 8 MHz | 54 |
| Low speed internal oscillator (IRC40K) frequency | fIRC40K | 30 | 40 | 60 | kHz | VDD = VDDA = 3.3 V, TA = -40 °C ~ +85 °C | 54 |
| IRC28M oscillator frequency accuracy, factory-trimmed | ACCIRC28M | -4 | 5 | % | VDD = VDDA = 3.3 V, TA = -40 °C ~ +85 °C | 55 | |
| IRC28M oscillator frequency accuracy, factory-trimmed | ACCIRC28M | -3 | 3 | % | VDD = VDDA = 3.3 V, TA = 0 °C ~ +85 °C | 55 | |
| IRC28M oscillator frequency accuracy, factory-trimmed | ACCIRC28M | -2 | 2 | % | VDD = VDDA = 3.3 V TA = 25 °C | 55 | |
| IRC28M oscillator duty cycle | DIRC28M | 45 | 50 | 55 | % | VDD = VDDA = 3.3 V, fIRC28M = 28 MHz | 55 |
| PLL input clock frequency | fPLLIN | 1 | 25 | MHz | 56 | ||
| PLL output clock frequency | fPLLOUT | 16 | 72 | MHz | 56 | ||
| PLL lock time | tLOCK | 300 | μs | 56 | |||
| Number of guaranteed program/erase cycles (endurance) | PECYC | 100 | kcycles | TA = -40 °C ~ +85 °C | 56 | ||
| Data retention time | tRET | 10 | years | 10k cycles at TA = 85 °C | 56 | ||
| Word programming time | tPROG | 37 | 42 | μs | TA = -40 °C ~ + 85 °C | 56 | |
| Page erase time | tERASE | 3.2 | 4 | ms | TA = -40 °C ~ +85 °C | 56 | |
| Mass erase time | tMERASE | 8 | 10 | ms | TA = -40 °C ~ +85 °C | 56 | |
| NRST input low level voltage | VIL(NRST) | -0.5 | 0.71 | V | VDD = VDDA = 1.8 V | 56 | |
| NRST input high level voltage | VIH(NRST) | 1.08 | V | VDD = VDDA = 1.8 V | 56 | ||
| NRST input low level voltage | VIL(NRST) | -0.5 | 1.05 | V | VDD = VDDA = 2.5 V | 56 | |
| NRST input high level voltage | VIH(NRST) | 1.42 | V | VDD = VDDA = 2.5 V | 56 | ||
| NRST input low level voltage | VIL(NRST) | -0.5 | 1.4 | V | VDD = VDDA = 3.3 V | 56 | |
| NRST input high level voltage | VIH(NRST) | 1.8 | V | VDD = VDDA = 3.3 V | 57 | ||
| NRST input low level voltage | VIL(NRST) | -0.5 | 1.53 | V | VDD = VDDA = 3.6 V | 57 | |
| NRST input high level voltage | VIH(NRST) | 1.95 | V | VDD = VDDA = 3.6 V | 57 | ||
| Low level output voltage for an IO pin | VOL | 0.2 | V | IIO = +8 mA, VDD = 1.8 V | 57 | ||
| Low level output voltage for an IO pin | VOL | 0.1 | V | IIO = +8 mA, VDD = 3.3 V | 57 | ||
| High level output voltage for an IO pin | VOH | 1.5 | V | IIO = +8 mA, VDD = 1.8 V | 58 | ||
| High level output voltage for an IO pin | VOH | 2.3 | V | IIO = +8 mA, VDD = 2.5 V | 58 | ||
| High level output voltage for an IO pin | VOH | 3.1 | V | IIO = +8 mA, VDD = 3.3 V | 58 | ||
| High level output voltage for an IO pin | VOH | 3.4 | V | IIO = +8 mA, VDD = 3.6 V | 58 | ||
| Low level output voltage for an IO pin | VOL | 0.5 | V | IIO = +20 mA, VDD = 2.5 V | 57 | ||
| Low level output voltage for an IO pin | VOL | 0.4 | V | IIO = +20 mA, VDD = 3.3 V | 57 | ||
| Low level output voltage for an IO pin | VOL | 0.4 | V | IIO = +20 mA, VDD = 3.6 V | 58 | ||
| High level output voltage for an IO pin | VOH | 1.9 | V | IIO = +20 mA, VDD = 2.5 V | 58 | ||
| High level output voltage for an IO pin | VOH | 2.8 | V | IIO = +20 mA, VDD = 3.3 V | 58 |
CAD (KiCad official)
- Symbol:
GD32E230K6U6 - Footprint:
Package_DFN_QFN:QFN-32-1EP_5x5mm_P0.5mm_EP3.3x3.3mm - 3D model: QFN-32-EP(5x5) (KiCad packages3D, STEP)
- 3D model files:
gd32e230k6u6-etched.step/gd32e230k6u6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gd32e230k6u6.step/gd32e230k6u6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GigaDevice Semicon Beijing datasheet (76 pp, sha256
d410a03c442e14b3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).