component

GD25Q16CEIGR

Public Made by Adom

by adom

GigaDevice Semicon Beijing NOR FLASH, USON-8(2x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentmemorygd25q16ceigrfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
gd25q16ceigr / README.md
History Download
Ray Publish 0.1.0 fbd5005 3h ago

GD25Q16CEIGR

GigaDevice Semicon Beijing · NOR FLASH · USON-8(2x3)

GD25Q16CEIGR from GigaDevice Semicon Beijing, in a USON-8(2x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CS# input Chip Select input; must be driven high when the device is not selected and must not be left floating after power-on.
2 SO (IO1) bidirectional Serial data output in standard SPI and Data Input/Output 1 in dual and quad SPI.
3 WP# (IO2) bidirectional Write Protect input in standard and dual SPI and Data Input/Output 2 in quad SPI.
4 VSS power_in Ground.
5 SI (IO0) bidirectional Serial data input in standard SPI and Data Input/Output 0 in dual and quad SPI.
6 SCLK input Serial Clock input.
7 HOLD# (IO3) bidirectional Hold input in standard and dual SPI and Data Input/Output 3 in quad SPI.
8 VCC power_in Power supply input for a single supply voltage range of 2.7 to 3.6V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GigaDevice Semicon Beijing
Package USON-8(2x3)
Category Memory
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Leakage Current ILI -2 2 μA 44
Output Leakage Current ILO -2 2 μA 44
Standby Current ICC1 1 5 μA CS#=VCC, VIN=VCC or VSS 44
Deep Power-Down Current ICC2 1 5 μA CS#=VCC, VIN=VCC or VSS 44
Operating Current (Read) 120MHz ICC3 15 20 mA CLK=0.1VCC/0.9VCC at 120MHz, Q=Open(*1,*2,*4 I/O) 44
Operating Current (Read) 80MHz ICC3 13 18 mA CLK=0.1VCC/0.9VCC at 80MHz, Q=Open(*1,*2,*4 I/O) 44
Operating Current (PP) ICC4 20 mA CS#=VCC 44
Operating Current (WRSR) ICC5 20 mA CS#=VCC 44
Operating Current (SE) ICC6 20 mA CS#=VCC 44
Operating Current (BE) ICC7 20 mA CS#=VCC 44
Operating Current (CE) ICC8 20 mA CS#=VCC 44
High Performance Current ICC9 0.6 1.2 mA 44
Input Low Voltage VIL 0.2 VCC printed as 0.2VCC 44
Input High Voltage VIH 0.7 VCC printed as 0.7VCC 44
Output Low Voltage VOL 0.2 V IOL=100μA 44
Supply Voltage VCC 2.7 3.6 V Full voltage range 4
Operating Temperature (I grade) T -40 85 ℃ DC/AC characteristics range 44
Supply Voltage VCC -0.6 4.2 V 42
Applied Input / Output Voltage -0.6 V -0.6 to VCC+0.4 42
Transient Input / Output Voltage (overshoot) -2 V -2.0 to VCC+2.0 42
Storage Temperature -65 150 ℃ 42
VCC (min) to CS# Low tVSL 1.8 ms 42
Write Inhibit Voltage VWI 1.5 2.5 V 42
Input Capacitance CIN 6 pF VIN=0V 43
Output Capacitance COUT 8 pF VOUT=0V 43
Serial Clock Frequency (Dual/Quad, no HPM, 3.0-3.6V) FC 104 MHz CL=30pF, VCC=2.7~3.6V 47
Serial Clock Frequency (Dual/Quad, no HPM, 2.7-3.0V) fC1 80 MHz CL=30pF 47
Serial Clock Frequency (Dual/Quad, with HPM) fC2 120 MHz CL=30pF 47
Serial Clock Frequency (Fast Read, WRSR) fC3 120 MHz CL=30pF 47
Serial Clock Frequency (Read 03H, ID, Status) fR 80 MHz CL=30pF 47
Serial Clock High Time tCLH 4 ns 47
Serial Clock Low Time tCLL 4 ns 47
Serial Clock Rise Time (Slew Rate) tCLCH 0.1 V/ns 47
Serial Clock Fall Time (Slew Rate) tCHCL 0.1 V/ns 47
CS# Active Setup Time tSLCH 5 ns 47
CS# Active Hold Time tCHSH 5 ns 47
CS# Not Active Setup Time tSHCH 5 ns 47
CS# Not Active Hold Time tCHSL 5 ns 47
CS# High Time (Read/Write) tSHSL 20 ns 47
Output Disable Time tSHQZ 6 ns 47
Output Hold Time tCLQX 1.2 ns 47
Data In Setup Time tDVCH 2 ns 47
Data In Hold Time tCHDX 2 ns 47
Clock Low To Output Valid tCLQV 7 ns 47
Write Protect Setup Time Before CS# Low tWHSL 20 ns 47
Write Protect Hold Time After CS# High tSHWL 100 ns 47
CS# High To Deep Power-Down Mode tDP 20 μs 47
CS# High To Standby Mode Without Electronic Signature Read tRES1 20 μs 48
CS# High To Standby Mode With Electronic Signature Read tRES2 20 μs 48
CS# High To Next Command After Suspend tSUS 20 μs 48
Latency Between Resume And Next Suspend tRS 100 μs 48
CS# High To Next Command After Reset (Except From Erase) tRST 30 μs 48
CS# High To Next Command After Reset (From Erase) tRST_E 12 ms 48
Write Status Register Cycle Time tW 5 30 ms 48
Byte Program Time (First Byte) tBP1 30 50 μs 48
Additional Byte Program Time tBP2 2.5 12 μs After first byte 48
Page Programming Time tPP 0.6 2.4 ms 48
Sector Erase Time (4K Bytes) tSE 45 300 ms 48
Block Erase Time (32K Bytes) tBE1 0.15 1.2 s 48
Block Erase Time (64K Bytes) tBE2 0.25 2 s 48
Chip Erase Time tCE 7 20 s 48

CAD (KiCad official)

  • Symbol: GD25Q16CEIGR
  • Footprint: Package_SON:SON-8-1EP_3x2mm_P0.5mm_EP1.4x1.6mm
  • 3D model: USON-8(2x3), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: gd25q16ceigr-etched.step / gd25q16ceigr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gd25q16ceigr.step / gd25q16ceigr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GigaDevice Semicon Beijing datasheet (69 pp, sha256 6f7024a13657c87b, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF