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GC4D60120D

Public Made by Adom

by adom

SUPSiC SiC Diodes, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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GC4D60120D

SUPSiC · SiC Diodes · TO-247-3

GC4D60120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A1 passive Anode of the first diode leg; each leg is rated VRRM 1200 V and 38 A continuous at TC = 135°C.
2 K passive Common cathode of both diode legs, connected internally to the case/tab; 76 A per device at TC = 135°C.
3 A2 passive Anode of the second diode leg; each leg is rated VRRM 1200 V and 38 A continuous at TC = 135°C.

Key specifications

Parameter Value
Manufacturer SUPSiC
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive Peak Reverse Voltage VRRM 1200 V Per Leg 1
Continuous Forward Current IF 55 A TC = 100°C, D = 1, per leg 1
Continuous Forward Current IF 110 A TC = 100°C, D = 1, per device 1
Continuous Forward Current IF 38 A TC = 135°C, D = 1, per leg 1
Continuous Forward Current IF 76 A TC = 135°C, D = 1, per device 1
Continuous Forward Current IF 30 A TC = 148°C, D = 1, per leg 1
Continuous Forward Current IF 60 A TC = 148°C, D = 1, per device 1
Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM 240 A TC = 25°C, t = 10 ms, per leg 1
Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM 192 A TC = 150°C, t = 10 ms, per leg 1
Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM 144 A TC = 25°C, t = 10 ms, per leg 1
Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM 100 A TC = 150°C, t = 10 ms, per leg 1
Non-Repetitive Peak Forward Surge Current IF,MAX 1200 A TC = 25°C, t = 10 µs, per leg 1
i²t Value ∫i dt 288 A s TC = 25°C, t = 10 ms, per leg 1
Non-Repetitive Avalanche Energy EAS 271 mJ L = 0.6 mH, I = 30 A, per leg 1
Diode Ruggedness dV/dt dV/dt 200 V/ns V = 0 ~ 960 V 1
Power Dissipation PTOT 313 W TC = 25°C, per leg 1
Power Dissipation PTOT 626 W TC = 25°C, per device 1
Operating and Storage Temperature Tj, Tstg -55 175 °C 1
Forward Voltage VF 1.5 1.9 V IF = 30 A, TJ = 25°C 2
Forward Voltage VF 1.8 2.5 V IF = 30 A, TJ = 175°C 2
Reverse Current IR 2 20 µA VR = 1200 V, TJ = 25°C 2
Reverse Current IR 20 µA VR = 1200 V, TJ = 175°C 2
Total Capacitive Charge QC 97 nC VR = 800 V, IF = 30 A, di/dt = 200 A/µs, TJ = 25°C 2
Total Capacitance C 64 pF VR = 0 V, TJ = 25°C, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: GC4D60120D
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: gc4d60120d-etched.step / gc4d60120d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc4d60120d.step / gc4d60120d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SUPSiC datasheet (6 pp, sha256 b94ae48810b1d273, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF