# GC4D30120H

**SUPSiC** · SiC Diodes · TO-247-2

GC4D30120H from SUPSiC, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PIN 1 | passive | Labelled PIN 1 on the TO-247-2 package drawing; the datasheet does not state whether this terminal is the anode or the cathode. |
| 2 | PIN 2 | passive | Labelled PIN 2 on the TO-247-2 package drawing; the datasheet does not state whether this terminal is the anode or the cathode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-2 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Voltage (TJ = 25 °C) | VF |  | 1.5 | 1.8 | V | IF = 30 A, TJ = 25 °C | 2 |
| Forward Voltage (TJ = 175 °C) | VF |  | 2.2 | 3 | V | IF = 30 A, TJ = 175 °C | 2 |
| Reverse Current (TJ = 25 °C) | IR |  | 40 | 250 | µA | VR = 1200 V, TJ = 25 °C | 2 |
| Reverse Current (TJ = 175 °C) | IR |  | 70 | 450 | µA | VR = 1200 V, TJ = 175 °C | 2 |
| Repetitive Peak Reverse Voltage | VRRM |  |  | 1200 | V |  | 1 |
| DC Blocking Voltage | VDC |  |  | 1200 | V |  | 1 |
| Continuous Forward Current (TJ = 25 °C) | IF |  |  | 94 | A | TJ = 25 °C | 1 |
| Continuous Forward Current (TJ = 135 °C) | IF |  |  | 45 | A | TJ = 135 °C | 1 |
| Continuous Forward Current (TJ = 155 °C) | IF |  |  | 30 | A | TJ = 155 °C | 1 |
| Repetitive Peak Forward Surge Current (Tc = 25 °C) | IFRM |  |  | 121 | A | Tc = 25 °C, tp = 10 ms, Half Sine Pulse | 1 |
| Repetitive Peak Forward Surge Current (Tc = 110 °C) | IFRM |  |  | 68 | A | Tc = 110 °C, tp = 10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Forward Surge Current (Tc = 25 °C) | IFSM |  |  | 233 | A | Tc = 25 °C, tp = 10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Forward Surge Current (Tc = 110 °C) | IFSM |  |  | 209 | A | Tc = 110 °C, tp = 10 ms, Half Sine Pulse | 1 |
| Power Dissipation (Tc = 25 °C) | Ptot |  |  | 441 | W | Tc = 25 °C | 1 |
| Power Dissipation (Tc = 110 °C) | Ptot |  |  | 191 | W | Tc = 110 °C | 1 |
| i2t Value (Tc = 25 °C) | ∫i2t |  |  | 271 | A2s | Tc = 25 °C, tp = 10 ms | 1 |
| i2t Value (Tc = 110 °C) | ∫i2t |  |  | 218 | A2s | Tc = 110 °C, tp = 10 ms | 1 |
| Operating Junction & Storage Temperature | TJ, Tstg | -55 |  | 175 | °C |  | 2 |
| Maximum Processing Temperature | TPROC |  |  | 325 |  | 10 min. Maximum | 2 |
| Thermal Resistance, Junction to Case | Rθ, JC |  | 0.34 |  | °C / W |  | 2 |

## CAD (KiCad official)

- Symbol: `GC4D30120H`
- Footprint: `Package_TO_SOT_THT:TO-247-2_Vertical`
- 3D model: TO-247-2 (KiCad packages3D, STEP)
- 3D model files: `gc4d30120h-etched.step` / `gc4d30120h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gc4d30120h.step` / `gc4d30120h.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SUPSiC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756399683210498048) (5 pp, sha256 `7b9914f5680267c5`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/gc4d30120h-datasheet.pdf)