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GC4D20120H

SUPSiC · SiC Diodes · TO-247-2

GC4D20120H from SUPSiC, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PIN 1 passive Terminal labeled PIN 1 on the TO-247-2 package; the datasheet does not state whether it is the anode or the cathode, and gives no electrical limit for this terminal alone.
2 PIN 2 passive Terminal labeled PIN 2 on the TO-247-2 package; the datasheet does not state whether it is the anode or the cathode, and gives no electrical limit for this terminal alone.

Key specifications

Parameter Value
Manufacturer SUPSiC
Package TO-247-2
Category Silicon Carbide (SiC) Devices
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage (TJ=25°C) VF 1.5 2.2 V IF = 20 A, TJ = 25°C 2
Forward Voltage (TJ=175°C) VF 1.8 3 V IF = 20 A, TJ = 175°C 2
Reverse Current (TJ=25°C) IR 35 65 μA VR = 1200 V, TJ = 25°C 2
Reverse Current (TJ=175°C) IR 200 400 μA VR = 1200 V, TJ = 175°C 2
Repetitive Peak Reverse Voltage VRRM 1200 V 1
Surge Peak Reverse Voltage VRSM 1300 V 1
DC Peak Reverse Voltage VR 1200 V 1
Continuous Forward Current IF 54 A TC=25°C 1
Continuous Forward Current IF 26 A TC=135°C 1
Continuous Forward Current IF 20 A TC=156°C 1
Repetitive Peak Forward Surge Current IFRM 86 A TC=25°C, tP=10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 56 A TC=110°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 130 A TC=25°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 104 A TC=110°C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Current IF,Max 1150 A TC=25°C, tP=10 ms, Pulse 1
Non-Repetitive Peak Forward Current IF,Max 950 A TC=110°C, tP=10 ms, Pulse 1
Power Dissipation Ptot 246 W TC=25°C 1
Power Dissipation Ptot 106.5 W TC=110°C 1
Diode dV/dt ruggedness dV/dt 200 V/ns VR=0-960V 1
i2t value ∫i2dt 84.5 A2s TC=25°C, tP=10 ms 1
i2t value ∫i2dt 54 A2s TC=110°C, tP=10 ms 1
Operating Junction and Storage Temperature TJ, Tstg -55 175 °C 1
TO-247 Mounting Torque 1 Nm M3 Screw 1
TO-247 Mounting Torque 8.8 lbf-in 6-32 Screw 1
Thermal Resistance, Junction to Case RθJC 0.61 °C/W Fig. 9 2

CAD (KiCad official)

  • Symbol: GC4D20120H
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2 (KiCad packages3D, STEP)
  • 3D model files: gc4d20120h-etched.step / gc4d20120h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc4d20120h.step / gc4d20120h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SUPSiC datasheet (6 pp, sha256 a69603cec69350ec, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF