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GC4D20120D

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SUPSiC SiC Diodes, TO-247-3. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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GC4D20120D

SUPSiC · SiC Diodes · TO-247-3

GC4D20120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE passive Per package outline designation; function is not explained in datasheet; GATE terminology is non-standard for Schottky rectifier diodes.
2 DRAIN (COLLECTOR) passive One terminal of the silicon carbide Schottky diode per TO-247-3 package pinout; datasheet does not explicitly designate anode vs. cathode polarity.
3 SOURCE (EMITTER) passive Other terminal of the silicon carbide Schottky diode per TO-247-3 package pinout; datasheet does not explicitly designate anode vs. cathode polarity.

Key specifications

Parameter Value
Manufacturer SUPSiC
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Junction operating temperature range (TJ) TJ -55 175 °C 1
Storage temperature range (Tstg) Tstg -55 135 °C 1
Repetitive Peak Reverse Voltage VRRM 1200 V 1
Surge Peak Reverse Voltage VRSM 1300 V 1
DC Blocking Voltage VDC 1200 V 1
Continuous Forward Current (per leg) IF 34 A TC=25˚C, per leg 1
Continuous Forward Current (per device) IF 68 A TC=25˚C, per device 1
Continuous Forward Current (per leg) IF 16.5 A TC=135˚C, per leg 1
Continuous Forward Current (per device) IF 34 A TC=135˚C, per device 1
Continuous Forward Current (per leg) IF 10 A TC=157˚C, per leg 1
Continuous Forward Current (per device) IF 20 A TC=157˚C, per device 1
Repetitive Peak Forward Surge Current IFRM 48 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 31.5 A TC=110˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Surge Current IFSM 72 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Surge Current IFSM 59.5 A TC=110˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Peak Forward Current IF,Max 750 A TC=25˚C, tP=10 ms, Pulse 1
Non-Repetitive Peak Forward Current IF,Max 620 A TC=110˚C, tP=10 ms, Pulse 1
Power Dissipation (per leg) Ptot 176 W TC=25˚C, per leg 1
Power Dissipation (per device) Ptot 352 W TC=25˚C, per device 1
Power Dissipation (per leg) Ptot 76 W TC=110˚C, per leg 1
Power Dissipation (per device) Ptot 152 W TC=110˚C, per device 1
Diode dV/dt ruggedness dV/dt 200 V/ns VR=0-960V 1
i2t value ∫i2dt 25 A2s TC=25˚C, tP=10 ms 1
i2t value ∫i2dt 17.6 A2s TC=110˚C, tP=10 ms 1
Mounting torque (M3 screw) 1 Nm M3 Screw 1
Mounting torque (6-32 screw) 8.8 lbf-in 6-32 Screw 1
Forward Voltage (25°C) VF 1.5 2.2 V IF = 10 A TJ=25°C 2
Forward Voltage (175°C) VF 1.8 3 V IF = 10 A TJ=175°C 2
Reverse Current (25°C) IR 30 250 μA VR = 1200 V TJ=25°C 2
Reverse Current (175°C) IR 55 350 μA VR = 1200 V TJ=175°C 2
Thermal Resistance Junction to Case RθJC 0.85 °C/W footnote * 2
Thermal Resistance Junction to Case RθJC 0.43 °C/W footnote ** 2

CAD (KiCad official)

  • Symbol: GC4D20120D
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: gc4d20120d-etched.step / gc4d20120d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc4d20120d.step / gc4d20120d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SUPSiC datasheet (3 pp, sha256 0e1c577997bb3902, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF