component
GC4D10120D
Public Made by Adomby adom
SUPSiC SiC Diodes, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
GC4D10120D
SUPSiC · SiC Diodes · TO-247-3
GC4D10120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode leg, rated 1200 V VRRM and 9 A continuous per leg at TC=135°C. |
| 2 | K | passive | Common cathode of both diode legs, tied internally to the case/tab, rated 1200 V VRRM and 18 A per device at TC=135°C. |
| 3 | A2 | passive | Anode of the second Schottky diode leg, rated 1200 V VRRM and 9 A continuous per leg at TC=135°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 1200 | V | 1 | |||
| Surge Peak Reverse Voltage | VRSM | 1300 | V | 1 | |||
| DC Peak Reverse Voltage | VR | 1200 | V | 1 | |||
| Continuous Forward Current (per leg) | IF | 19 | A | TC=25°C; per device 38 A | 1 | ||
| Continuous Forward Current (per leg) | IF | 9 | A | TC=135°C; per device 18 A | 1 | ||
| Continuous Forward Current (per leg) | IF | 5 | A | TC=160°C; per device 10 A | 1 | ||
| Repetitive Peak Forward Surge Current | IFRM | 26 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Repetitive Peak Forward Surge Current | IFRM | 18 | A | TC=110°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Forward Surge Current | IFSM | 46 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Forward Surge Current | IFSM | 36 | A | TC=110°C, tP=10 ms, Half Sine Pulse | 1 | ||
| Non-Repetitive Peak Forward Current | IF,Max | 400 | A | TC=25°C, tP=10 ms, Pulse | 1 | ||
| Non-Repetitive Peak Forward Current | IF,Max | 320 | A | TC=110°C, tP=10 ms, Pulse | 1 | ||
| Power Dissipation (per leg) | Ptot | 93 | W | TC=25°C; per device 187 W | 1 | ||
| Power Dissipation (per leg) | Ptot | 40 | W | TC=110°C; per device 81 W | 1 | ||
| Diode dV/dt ruggedness | dV/dt | 200 | V/ns | VR=0-650V | 1 | ||
| i2t value | ∫i2dt | 10.6 | A2s | TC=25°C, tP=10 ms | 1 | ||
| i2t value | ∫i2dt | 6.5 | A2s | TC=110°C, tP=10 ms | 1 | ||
| Operating Junction Range | TJ | -55 | 175 | °C | 1 | ||
| Storage Temperature Range | Tstg | -55 | 135 | °C | 1 | ||
| Forward Voltage | VF | 1.4 | 1.8 | V | IF = 5 A, TJ = 25°C | 2 | |
| Forward Voltage | VF | 1.9 | V | IF = 5 A, TJ = 175°C | 2 | ||
| Reverse Current | IR | 20 | 150 | μA | VR = 1200 V, TJ = 25°C | 2 | |
| Reverse Current | IR | 40 | 300 | μA | VR = 1200 V, TJ = 175°C | 2 | |
| Thermal Resistance from Junction to Case | RθJC | 1.6 | °C/W | Per Leg | 2 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.8 | °C/W | Per Device | 2 |
CAD (KiCad official)
- Symbol:
GC4D10120D - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
gc4d10120d-etched.step/gc4d10120d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc4d10120d.step/gc4d10120d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (6 pp, sha256
f557807313410f6c, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GC4D10120D
**SUPSiC** · SiC Diodes · TO-247-3
GC4D10120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode leg, rated 1200 V VRRM and 9 A continuous per leg at TC=135°C. |
| 2 | K | passive | Common cathode of both diode legs, tied internally to the case/tab, rated 1200 V VRRM and 18 A per device at TC=135°C. |
| 3 | A2 | passive | Anode of the second Schottky diode leg, rated 1200 V VRRM and 9 A continuous per leg at TC=135°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | | | 1200 | V | | 1 |
| Surge Peak Reverse Voltage | VRSM | | | 1300 | V | | 1 |
| DC Peak Reverse Voltage | VR | | | 1200 | V | | 1 |
| Continuous Forward Current (per leg) | IF | | | 19 | A | TC=25°C; per device 38 A | 1 |
| Continuous Forward Current (per leg) | IF | | | 9 | A | TC=135°C; per device 18 A | 1 |
| Continuous Forward Current (per leg) | IF | | | 5 | A | TC=160°C; per device 10 A | 1 |
| Repetitive Peak Forward Surge Current | IFRM | | | 26 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 |
| Repetitive Peak Forward Surge Current | IFRM | | | 18 | A | TC=110°C, tP=10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Forward Surge Current | IFSM | | | 46 | A | TC=25°C, tP=10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Forward Surge Current | IFSM | | | 36 | A | TC=110°C, tP=10 ms, Half Sine Pulse | 1 |
| Non-Repetitive Peak Forward Current | IF,Max | | | 400 | A | TC=25°C, tP=10 ms, Pulse | 1 |
| Non-Repetitive Peak Forward Current | IF,Max | | | 320 | A | TC=110°C, tP=10 ms, Pulse | 1 |
| Power Dissipation (per leg) | Ptot | | | 93 | W | TC=25°C; per device 187 W | 1 |
| Power Dissipation (per leg) | Ptot | | | 40 | W | TC=110°C; per device 81 W | 1 |
| Diode dV/dt ruggedness | dV/dt | | | 200 | V/ns | VR=0-650V | 1 |
| i2t value | ∫i2dt | | | 10.6 | A2s | TC=25°C, tP=10 ms | 1 |
| i2t value | ∫i2dt | | | 6.5 | A2s | TC=110°C, tP=10 ms | 1 |
| Operating Junction Range | TJ | -55 | | 175 | °C | | 1 |
| Storage Temperature Range | Tstg | -55 | | 135 | °C | | 1 |
| Forward Voltage | VF | | 1.4 | 1.8 | V | IF = 5 A, TJ = 25°C | 2 |
| Forward Voltage | VF | | | 1.9 | V | IF = 5 A, TJ = 175°C | 2 |
| Reverse Current | IR | | 20 | 150 | μA | VR = 1200 V, TJ = 25°C | 2 |
| Reverse Current | IR | | 40 | 300 | μA | VR = 1200 V, TJ = 175°C | 2 |
| Thermal Resistance from Junction to Case | RθJC | | 1.6 | | °C/W | Per Leg | 2 |
| Thermal Resistance from Junction to Case | RθJC | | 0.8 | | °C/W | Per Device | 2 |
## CAD (KiCad official)
- Symbol: `GC4D10120D`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `gc4d10120d-etched.step` / `gc4d10120d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gc4d10120d.step` / `gc4d10120d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [SUPSiC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756399726524669952) (6 pp, sha256 `f557807313410f6c`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gc4d10120d-datasheet.pdf)