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Contents

README

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GC4D08120A

SUPSiC · SiC Diodes · TO-220-2

GC4D08120A from SUPSiC, in a TO-220-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 PIN 1 passive The datasheet shows PIN 1 on the TO-220-2 outline but does not state whether it is the anode or the cathode, or give any electrical limit for this terminal.
2 PIN 2 passive The datasheet shows PIN 2 on the TO-220-2 outline but does not state whether it is the anode or the cathode, or give any electrical limit for this terminal.

Key specifications

Parameter Value
Manufacturer SUPSiC
Package TO-220-2
Category Silicon Carbide (SiC) Devices
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage VF 1.5 2.2 V IF = 8 A, TJ = 25°C, Fig. 1 2
Forward Voltage VF 1.8 3 V IF = 8 A, TJ = 175°C, Fig. 1 2
Reverse Current IR 35 100 μA VR = 1200 V, TJ = 25°C, Fig. 2 2
Reverse Current IR 250 350 μA VR = 1200 V, TJ = 175°C, Fig. 2 2
Repetitive Peak Reverse Voltage VRRM 1200 V 1
Surge Peak Reverse Voltage VRSM 1300 V 1
DC Peak Reverse Voltage VR 1200 V 1
Continuous Forward Current IF 24.5 A TC=25˚C, Fig. 3 1
Continuous Forward Current IF 12 A TC=135˚C, Fig. 3 1
Continuous Forward Current IF 8 A TC=157˚C, Fig. 3 1
Repetitive Peak Forward Surge Current IFRM 37.5 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Repetitive Peak Forward Surge Current IFRM 25 A TC=110˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 64 A TC=25˚C, tP=10 ms, Half Sine Pulse 1
Non-Repetitive Forward Surge Current IFSM 49.5 A TC=110˚C, tP=10 ms, Half Sine Pulse, Fig. 8 1
Non-Repetitive Peak Forward Current IF,Max 600 A TC=25˚C, tP=10 ms, Pulse 1
Non-Repetitive Peak Forward Current IF,Max 480 A TC=110˚C, tP=10 ms, Pulse, Fig. 8 1
Power Dissipation Ptot 136.5 W TC=25˚C 1
Power Dissipation Ptot 59 W TC=110˚C, Fig. 4 1
Diode dV/dt ruggedness dV/dt 200 V/ns VR=0-960V 1
i2t value ∫i2dt 20.5 A2s TC=25˚C, tP=10 ms 1
i2t value ∫i2dt 12.25 A2s TC=110˚C, tP=10 ms 1
Operating Junction Range TJ -55 175 °C 1
Storage Temperature Range Tstg -55 135 °C 1
TO-220 Mounting Torque 1 Nm M3 Screw 1
TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw 1
Thermal Resistance from Junction to Case RθJC 1.1 °C/W Fig. 9 2

CAD (KiCad official)

  • Symbol: GC4D08120A
  • Footprint: Package_TO_SOT_THT:TO-220-2_Vertical
  • 3D model: TO-220-2 (KiCad packages3D, STEP)
  • 3D model files: gc4d08120a-etched.step / gc4d08120a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc4d08120a.step / gc4d08120a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SUPSiC datasheet (6 pp, sha256 1e80daed14ef3b5c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF