component
GC3M0040120D
Public Made by Adomby adom
SUPSiC Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGC3M0040120D
SUPSiC · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3
GC3M0040120D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input with maximum ratings -8/+19 V AC (f > 1 Hz) or -4/+15 V static |
| 2 | Drain | passive | Drain terminal rated for maximum 1200 V and continuous current of 66 A at 25 °C |
| 3 | Source | passive | Source terminal with integrated body diode rated for 51 A continuous forward current at 25 °C |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
GC3M0040120D - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
gc3m0040120d-etched.step/gc3m0040120d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc3m0040120d.step/gc3m0040120d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (4 pp, sha256
d0e7fe6455b4180f, retrieved 2026-09-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).