component
GC3M0021120K
Public Made by Adomby adom
SUPSiC Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGC3M0021120K
SUPSiC · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4
GC3M0021120K from SUPSiC, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain (also connected to the TAB/heat-slug). Blocks up to VDS = 1200 V (VGS = 0 V, ID = 100 μA). Conducts continuous ID = 100 A at TC = 25 °C (74 A at TC = 100 °C) with RDS(on) = 21 mΩ typ. at VGS = 15 V, ID = 50 A. |
| 2 | S | passive | Power Source - main high-current source terminal that carries the drain-source load current back to the bus. Internally the same node as the driver source but bonded separately to isolate the high di/dt path from the gate loop. |
| 3 | S_drv | passive | Driver Source (Kelvin source) - low-inductance sense return for the gate driver. Reference this pin, not the power source, for VGS drive so package/lead inductance in the power source path does not degrade switching. VGSmax dynamic -8/+19 V; static VGSop -4/+15 V. |
| 4 | G | input | Gate - MOS control input. VGS(th) = 1.8/2.5/3.6 V (min/typ/max at VDS = VGS, ID = 17.7 mA). Recommended drive VGS = -4 V/+15 V; internal gate resistance RG(int) ≈ 3.3 Ω; total gate charge Qg ≈ 162 nC at VDS = 800 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-4 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
Ordering variants
Same part, different packaging or reel option.
GC3M0021120K
CAD (KiCad official)
- Symbol:
GC3M0021120K - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
gc3m0021120k-etched.step/gc3m0021120k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc3m0021120k.step/gc3m0021120k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (3 pp, sha256
1689853bf2f066fa, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).