component
GC3M0015065D
Public Made by Adomby adom
SUPSiC MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownGC3M0015065D
SUPSiC · MOSFETs · TO-247-3
GC3M0015065D from SUPSiC, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; recommended turn-off/turn-on gate voltage is -4 V...0 V / +15 V, absolute maximum VGS -8/+19 V. |
| 2 | D | passive | Drain; 650 V maximum drain-source voltage, 120 A package-limited continuous current, also connected to the mounting tab (pad 4). |
| 3 | S | passive | Source; connected to the body diode anode, with continuous diode forward current of 79 A at VGS = -4 V, TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source voltage | VGSmax | -8 | 19 | V | 1 | ||
| Drain - Source Voltage | VDSmax | 650 | V | 1 | |||
| Continuous Drain Current | ID | 120 | A | VGS = 15 V, TC = 25 ˚C | 1 | ||
| Continuous Drain Current | ID | 96 | A | VGS = 15 V, TC = 100 ˚C | 1 | ||
| Pulsed Drain Current | ID(pulse) | 418 | A | Pulse width tP limited by Tjmax | 1 | ||
| Power Dissipation | PD | 416 | W | TC = 25 ˚C, TJ = 175 ˚C | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -40 | 175 | ˚C | 1 | ||
| Solder Temperature | TL | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 | ||
| Mounting Torque | Md | 1 | Nm | M3 or 6-32 screw | 1 | ||
| Mounting Torque | Md | 8.8 | lbf-in | M3 or 6-32 screw | 1 | ||
| Recommended turn-off gate voltage | VGS | -4 | 0 | V | Recommended turn off / turn on gate voltage (Note 1) | 1 | |
| Recommended turn-on gate voltage | VGS | 15 | V | Recommended turn off / turn on gate voltage (Note 1) | 1 | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.3 | 3.6 | V | VDS = VGS, ID = 15.5 mA | 2 |
| Gate Threshold Voltage | VGS(th) | 1.9 | V | VDS = VGS, ID = 15.5 mA, TJ = 175ºC | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 50 | μA | VDS = 650 V, VGS = 0 V | 2 | |
| Gate-Source Leakage Current | IGSS | 10 | 250 | nA | VGS = 15 V, VDS = 0 V | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 10.5 | 15 | 21 | mΩ | VGS = 15 V, ID = 55.8A | 2 |
| Drain-Source On-State Resistance | RDS(on) | 20 | mΩ | VGS = 15 V, ID = 55.8A, TJ = 175ºC | 2 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 | V | VGS = 0 V, ID = 100 μA | 2 | ||
| Transconductance | gfs | 42 | S | VDS= 20 V, IDS= 55.8 A | 2 | ||
| Transconductance | gfs | 40 | S | VDS= 20 V, IDS= 55.8 A, TJ = 175ºC | 2 | ||
| Input Capacitance | Ciss | 5011 | pF | VGS = 0 V, VDS = 400 V, f = 100 Khz, VAC = 25 mV | 2 | ||
| Output Capacitance | Coss | 289 | pF | VGS = 0 V, VDS = 400 V, f = 100 Khz, VAC = 25 mV | 2 | ||
| Reverse Transfer Capacitance | Crss | 31 | pF | VGS = 0 V, VDS = 400 V, f = 100 Khz, VAC = 25 mV | 2 | ||
| Effective Output Capacitance (Energy Related) | Co(er) | 357 | pF | Note 3 | 2 | ||
| Effective Output Capacitance (Time Related) | Co(tr) | 516 | pF | Note 3 | 2 | ||
| Coss Stored Energy | Eoss | 29 | μJ | 2 | |||
| Turn-On Switching Energy (Body Diode) | EON | 1500 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET | 2 | ||
| Turn Off Switching Energy (Body Diode) | EOFF | 700 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = Internal Body Diode of MOSFET | 2 | ||
| Turn-On Switching Energy (External Diode) | EON | 1200 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = External SiC DIODE | 2 | ||
| Turn Off Switching Energy (External Diode) | EOFF | 1000 | μJ | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, TJ = 175ºC, FWD = External SiC DIODE | 2 | ||
| Turn-On Delay Time | td(on) | 22 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, inductive load | 2 | ||
| Rise Time | tr | 125 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, inductive load | 2 | ||
| Turn-Off Delay Time | td(off) | 58 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, inductive load | 2 | ||
| Fall Time | tf | 25 | ns | VDD = 400 V, VGS = -4 V/15 V, ID = 55.8 A, RG(ext) = 5 Ω, L= 57.6 μH, inductive load | 2 | ||
| Internal Gate Resistance | RG(int) | 1.5 | Ω | f = 1 MHz, VAC= 25 mV | 2 | ||
| Gate to Source Charge | Qgs | 54 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A | 2 | ||
| Gate to Drain Charge | Qgd | 62 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A | 2 | ||
| Total Gate Charge | Qg | 188 | nC | VDS = 400 V, VGS = -4 V/15 V, ID = 55.8 A | 2 | ||
| Diode Forward Voltage | VSD | 4.7 | V | VGS = -4 V, ISD = 27.9 A, TJ = 25 °C | 3 | ||
| Diode Forward Voltage | VSD | 4.2 | V | VGS = -4 V, ISD = 27.9 A, TJ = 175 °C | 3 | ||
| Continuous Diode Forward Current | IS | 79 | A | VGS = -4 V, TC = 25˚C | 3 | ||
| Diode pulse Current | IS, pulse | 418 | A | VGS = -4 V, pulse width tP limited by Tjmax | 3 | ||
| Reverse Recovery time | trr | 85 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 1500 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery Charge | Qrr | 667 | nC | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 1500 A/µs, TJ = 175 °C | 3 | ||
| Peak Reverse Recovery Current | Irrm | 17 | A | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 1500 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery time | trr | 74 | ns | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 1000 A/µs, TJ = 175 °C | 3 | ||
| Reverse Recovery Charge | Qrr | 562 | nC | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 1000 A/µs, TJ = 175 °C | 3 | ||
| Peak Reverse Recovery Current | Irrm | 14 | A | VGS = -4 V, ISD = 55.8 A, VR = 400 V, dif/dt = 1000 A/µs, TJ = 175 °C | 3 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.35 | °C/W | Fig. 21 | 3 | ||
| Thermal Resistance From Junction to Ambient | RθJA | 40 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
GC3M0015065D - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
gc3m0015065d-etched.step/gc3m0015065d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc3m0015065d.step/gc3m0015065d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (11 pp, sha256
6dd68faa59b4787c, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).