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Contents

README

markdown

GC2M1000170D

SUPSiC · Silicon Carbide Field Effect Transistor (MOSFET) · TO247-3

GC2M1000170D from SUPSiC, in a TO247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Control terminal of the SiC N-channel enhancement-mode MOSFET. Recommended VGS operating range -5/+20 V; absolute maximum -10/+25 V. Threshold VGS(th) = 2.0-4.0 V typ 2.8 V.
2 D passive Drain. High-voltage power terminal. VDSmax = 1700 V, continuous ID = 5.0 A @ TC = 25 °C (3.5 A @ TC = 100 °C), pulsed ID = 15 A. RDS(on) = 0.8 Ω typ at VGS = 20 V, ID = 2 A. Electrically connected to the TO-247 metal tab.
3 S passive Source. Common return terminal for gate drive and drain current. Body diode cathode is internally tied to Drain, anode to Source (VSD = 3.8 V typ @ ISD = 1 A). Note: when using the SiC body diode, maximum recommended VGS = -5 V.

Key specifications

Parameter Value
Manufacturer SUPSiC
Package TO247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • GC2M1000170D

CAD (KiCad official)

  • Symbol: GC2M1000170D
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO247-3 (KiCad packages3D, STEP)
  • 3D model files: gc2m1000170d-etched.step / gc2m1000170d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gc2m1000170d.step / gc2m1000170d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SUPSiC datasheet (4 pp, sha256 bf71597f6df0411a, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF