component
GC2M0080120K
Public Made by Adomby adom
SUPSiC SiC MOSFETs, TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGC2M0080120K
SUPSiC · SiC MOSFETs · TO-247-4
GC2M0080120K from SUPSiC, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Drain | passive | Drain terminal (also the TO-247-4 tab) rated for VDSmax 1200 V at VGS = 0 V and ID = 100 μA. |
| 2 | Power Source | passive | Power source terminal carrying the main drain current, with continuous drain current rated at 36 A (VGS = 20 V, TC = 25 ˚C). |
| 3 | Driver Source | passive | Separate driver source terminal for the gate drive return, kept apart from the power source pin in this four-lead package. |
| 4 | Gate | input | Gate input with absolute maximum VGS of -10/+25 V and recommended operational VGS of -5/+20 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SUPSiC |
| Package | TO-247-4 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSmax | 1200 | V | VGS = 0 V, ID = 100 μA | 1 | ||
| Gate-Source Voltage | VGSmax | -10 | 25 | V | Absolute maximum values | 1 | |
| Gate-Source Voltage | VGSop | -5 | 20 | V | Recommended operational values | 1 | |
| Continuous Drain Current | ID | 36 | A | VGS = 20 V, TC = 25˚C, Fig. 19 | 1 | ||
| Continuous Drain Current | ID | 24 | A | VGS = 20 V, TC = 100˚C | 1 | ||
| Pulsed Drain Current | ID(pulse) | 80 | A | Pulse width tP limited by Tjmax, Fig. 22 | 1 | ||
| Power Dissipation | PD | 192 | W | TC=25˚C, TJ = 150 ˚C, Fig. 20 | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | ˚C | 1 | ||
| Solder Temperature | TL | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 | ||
| Mounting Torque | Md | 8.8 | Nm | M3 or 6-32 screw | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 100 μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 2.9 | 4 | V | VDS = VGS, ID = 5 mA | 2 |
| Gate Threshold Voltage | VGS(th) | 2.4 | V | VDS = VGS, ID = 5 mA, TJ = 150ºC | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 1200 V, VGS = 0 V | 2 | ||
| Gate-Source Leakage Current | IGSS | 250 | nA | VGS = 20 V, VDS = 0 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 80 | 98 | mΩ | VGS = 20 V, ID = 20 A, Fig. 4, 5, 6 | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 144 | mΩ | VGS = 20 V, ID = 20A, TJ = 150ºC | 2 | ||
| Continuous Diode Forward Current | IS | 36 | A | TC = 25˚C, Note 1 | 2 | ||
| Thermal Resistance from Junction to Case | RθJC | 0.6 | 0.65 | °C/W | Fig. 21 | 2 |
CAD (KiCad official)
- Symbol:
GC2M0080120K - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
gc2m0080120k-etched.step/gc2m0080120k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gc2m0080120k.step/gc2m0080120k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SUPSiC datasheet (10 pp, sha256
03a380d2bfe8dbe0, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).