component
GBU810
Public Made by Adomby adom
MDD（Microdiode Electronics） Bridge Rectifiers, GBU. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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GBU810
MDD（Microdiode Electronics） · Bridge Rectifiers · GBU
GBU810 from MDD（Microdiode Electronics）, in a GBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | passive | Positive DC output of the bridge rectifier, marked + on the package symbol. |
| 2 | 2 | passive | AC input terminal of the bridge rectifier, marked ~ on the package symbol. |
| 3 | 3 | passive | AC input terminal of the bridge rectifier, marked ~ on the package symbol. |
| 4 | - | passive | Negative DC output of the bridge rectifier, marked - on the package symbol. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | GBU |
| Category | Diodes |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 1000 | V | 1 | |||
| Maximum RMS voltage | VRMS | 700 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 1000 | V | 1 | |||
| Maximum average forward rectified current | I(AV) | 8 | A | @Tc=100°C (without heatsink) | 1 | ||
| Peak forward surge current | IFSM | 175 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 | ||
| Maximum forward voltage | VF | 1.1 | V | at 4.0A DC | 1 | ||
| Maximum DC reverse current | IR | 10 | μA | TA=25°C, at rated DC blocking voltage | 1 | ||
| Maximum DC reverse current | IR | 0.5 | mA | TA=125°C, at rated DC blocking voltage | 1 | ||
| Typical Thermal Resistance | RθJA | 2.2 | °C/W | Note 2: device mounted on 75mm75mm1.6mm Cu plate heatsink | 1 | ||
| Operating junction temperature range | TJ | -55 | 150 | °C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
GBU810 - Footprint:
Diode_THT:Diode_Bridge_Vishay_GBU - 3D model: GBU (KiCad packages3D, STEP)
- 3D model files:
gbu810-etched.step/gbu810-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gbu810.step/gbu810.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MDD（Microdiode Electronics） datasheet (3 pp, sha256
180b29044288d80c, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GBU810
**MDD（Microdiode Electronics）** · Bridge Rectifiers · GBU
GBU810 from MDD（Microdiode Electronics）, in a GBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | + | passive | Positive DC output of the bridge rectifier, marked + on the package symbol. |
| 2 | 2 | passive | AC input terminal of the bridge rectifier, marked ~ on the package symbol. |
| 3 | 3 | passive | AC input terminal of the bridge rectifier, marked ~ on the package symbol. |
| 4 | - | passive | Negative DC output of the bridge rectifier, marked - on the package symbol. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MDD（Microdiode Electronics） |
| Package | GBU |
| Category | Diodes |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | | | 1000 | V | | 1 |
| Maximum RMS voltage | VRMS | | | 700 | V | | 1 |
| Maximum DC blocking voltage | VDC | | | 1000 | V | | 1 |
| Maximum average forward rectified current | I(AV) | | | 8 | A | @Tc=100°C (without heatsink) | 1 |
| Peak forward surge current | IFSM | | | 175 | A | 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) | 1 |
| Maximum forward voltage | VF | | | 1.1 | V | at 4.0A DC | 1 |
| Maximum DC reverse current | IR | | | 10 | μA | TA=25°C, at rated DC blocking voltage | 1 |
| Maximum DC reverse current | IR | | | 0.5 | mA | TA=125°C, at rated DC blocking voltage | 1 |
| Typical Thermal Resistance | RθJA | | 2.2 | | °C/W | Note 2: device mounted on 75mm*75mm*1.6mm Cu plate heatsink | 1 |
| Operating junction temperature range | TJ | -55 | | 150 | °C | | 1 |
| Storage temperature range | TSTG | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `GBU810`
- Footprint: `Diode_THT:Diode_Bridge_Vishay_GBU`
- 3D model: GBU (KiCad packages3D, STEP)
- 3D model files: `gbu810-etched.step` / `gbu810-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gbu810.step` / `gbu810.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MDD（Microdiode Electronics） datasheet](docs/gbu810-datasheet.pdf) (3 pp, sha256 `180b29044288d80c`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gbu810-datasheet.pdf)