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Ray Publish 0.1.0 5474c70 11d ago

GBU806G

NH · Bridge Rectifiers · GBU

GBU806G from NH, in a GBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Output Cathode(-) power_out DC output cathode (negative) terminal of the bridge rectifier, marked '-' on the case.
2 AC1 input AC input terminal 1 of the bridge rectifier; the datasheet gives no electrical limits for this pin.
3 AC2 input AC input terminal 2 of the bridge rectifier; the datasheet gives no electrical limits for this pin.
4 Output Anode(+) power_out DC output anode (positive) terminal of the bridge rectifier, marked '+' on the case.

Key specifications

Parameter Value
Manufacturer NH
Package GBU
Category Diodes
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum Repetitive Peak Reverse Voltage (GBU806G) VRRM 600 V 1
Maximum RMS Voltage (GBU806G) VRMS 420 V 1
Maximum DC Blocking Voltage (GBU806G) VDC 600 V 1
Maximum Average Forward Rectified Current IF(AV) 8 A @ TC=100°C (see fig.1), with heatsink 1
Maximum Average Forward Rectified Current IF(AV) 2.9 A @ TC=100°C (see fig.1), without heatsink 1
Peak Forward Surge Current IFSM 175 A 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 1
Current Squared Time per Diode I2t 127.09 A2 sec t<8.3ms 1
Maximum Forward Voltage per Diode VFM 1 V @4.0A, pulse test 300 µs pulse width, 1% duty cycle (Note 1) 1
Maximum DC Reverse Current at Rated DC Blocking Voltage IRRM 5 uA at rated DC blocking voltage 1
Maximum DC Reverse Current at Rated DC Blocking Voltage IRRM 300 uA at rated DC blocking voltage, TC=125℃ 1
Typical Junction Capacitance per Diode CJ 50 pF measured at 1 MHz, applied reverse voltage 4.0 VDC (Note 3) 1
Typical Thermal Resistance, junction to ambient RθJA 8 ℃/W with heatsink, mounted on 75mm x 45mm x 5.5mm aluminum plate (Note 4) 1
Typical Thermal Resistance, junction to ambient RθJA 25 ℃/W without heatsink 1
Typical Thermal Resistance, junction to case RθJC 2 ℃/W 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: GBU806G
  • Footprint: Diode_THT:Diode_Bridge_Vishay_GBU
  • 3D model: GBU (KiCad packages3D, STEP)
  • 3D model files: gbu806g-etched.step / gbu806g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gbu806g.step / gbu806g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NH datasheet (5 pp, sha256 73ecd8e82ffc5a6a, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF