# GBU610

**hongjiacheng** · Bridge Rectifiers · GBU

GBU610 from hongjiacheng, in a GBU. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | - | passive | Negative DC output of the bridge rectifier (cathode side); bridge is rated 1000 V VRRM and 6.0 A average forward current for GBU610. |
| 2 | 2 | passive | AC input terminal of the bridge rectifier; GBU610 withstands 700 V maximum RMS voltage. |
| 3 | 3 | passive | AC input terminal of the bridge rectifier; GBU610 withstands 700 V maximum RMS voltage. |
| 4 | + | passive | Positive DC output of the bridge rectifier; GBU610 is rated 6.0 A average forward current with 150 A peak surge (8.3 ms). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | GBU |
| Category | Diodes |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Repetitive Peak Reverse Voltage | VRRM |  |  | 1000 | V |  | 1 |
| Maximum RMS Voltage | VRMS |  |  | 700 | V |  | 1 |
| Maximum DC blocking Voltage | VDC |  |  | 1000 | V |  | 1 |
| Maximum Average Forward Rectified Current | IF(AV) |  |  | 6 | A | @60Hz sinewave, Resistance load, TL (Fig.1) | 1 |
| Non-repetitive Peak Forward Surge Current | IFSM |  |  | 150 | A | @ t=8.3ms Half-sine wave | 1 |
| Rating for fusing | I²t |  |  | 93.37 | A²S | t=8.3ms, Ta=25 ℃ | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Junction temperature | Tj | -55 |  | 150 | ℃ |  | 1 |
| Maximum instantaneous forward voltage | VF |  |  | 1.1 | V | IF=3A | 2 |
| Maximum DC reverse current at rated DC blocking voltage | IR1 |  |  | 10 | μA | VR=VDC, TA=25℃ | 2 |
| Maximum DC reverse current at rated DC blocking voltage | IR2 |  |  | 500 | μA | VR=VDC, TA=100℃ | 2 |
| Typical Thermal Resistance junction to ambient | RθJ-A |  | 25 |  | ℃/W |  | 1 |
| Typical Thermal Resistance junction to case | RθJ-C |  | 2.3 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `GBU610`
- Footprint: `Diode_THT:Diode_Bridge_Vishay_GBU`
- 3D model: GBU (KiCad packages3D, STEP)
- 3D model files: `gbu610-etched.step` / `gbu610-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gbu610.step` / `gbu610.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [hongjiacheng datasheet](docs/gbu610-datasheet.pdf) (3 pp, sha256 `11f1f101633358fb`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/gbu610-datasheet.pdf)