component
GBS60037TOB
Public Made by Adomby adom
GOSEMICON MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownGBS60037TOB
GOSEMICON · MOSFETs · TO-247
GBS60037TOB from GOSEMICON, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 600 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, carrying the continuous drain current rated at 60 A at Tc=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOSEMICON |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0V, ID=1mA | 2 | ||
| Gate threshold voltage | V(GS)th | 3.4 | 4 | 4.6 | V | VDS=VGS, ID=1mA | 3 |
| Drain-source on state resistance | RDS-ON | 29 | 34 | mΩ | VGS=10V, ID=25A | 3 | |
| Drain-source on state resistance at Tj=125°C | RDS-ON | 60 | mΩ | VGS=10V, ID=25A, Tj=125℃ | 3 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30V, VDS=0V | 3 | ||
| Drain-source leakage current | IDSS | 5 | uA | VGS=0V, VDS=600V | 3 | ||
| Drain-source leakage current at Tj=125°C | IDSS | 500 | uA | VGS=0V, VDS=600V, Tj=125℃ | 3 | ||
| Drain-source voltage | VDS | 600 | V | 2 | |||
| Continuous drain current | ID | 60 | A | Tc=25°C | 2 | ||
| Continuous drain current | ID | 38 | A | Tc=100°C | 2 | ||
| Pulsed drain current | ID-pulse | 240 | A | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Single pulsed avalanche energy | EAS | 340 | mJ | ID=8A, VDD=50V | 2 | ||
| Repetitive avalanche energy | EAR | 1.7 | mJ | ID=8A, VDD=50V | 2 | ||
| Single pulsed avalanche current | IAS | 8 | A | 2 | |||
| Power dissipation | PD | 300 | W | 2 | |||
| MOSFET dv/dt ruggedness | dv/dt | 90 | V/ns | VDS=0~400V | 2 | ||
| Continuous diode forward current | IS | 60 | A | 2 | |||
| Diode pulsed current | IS-pulse | 240 | A | 2 | |||
| Reverse diode dv/dt | dv/dt | 70 | V/ns | VDS=0~400V, ISD<50A | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-case | RθJC | 0.416 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RθJA | 62 | °C/W | 2 | |||
| Soldering temperature | Tsold | 260 | °C | 2 | |||
| Gate resistance | Rg | 3 | Ω | F=1MHz, open drain | 3 | ||
| Input capacitance | Ciss | 6345 | pF | VGS=0V, VDS=400V, f=250KHz | 3 | ||
| Output capacitance | Coss | 110 | pF | VGS=0V, VDS=400V, f=250KHz | 3 | ||
| Reverse transfer capacitance | Crss | 15 | pF | VGS=0V, VDS=400V, f=250KHz | 3 | ||
| Effective output capacitance, energy related | Co(er) | 225 | pF | VGS = 0V, VDS = 0V~400V | 3 | ||
| Effective output capacitance, time related | Co(tr) | 2435 | pF | 3 | |||
| Turn-on delay time | td(on) | 46 | ns | VGS=15V, VDS=400V, ID=25A, RG=3Ω | 3 | ||
| Rise time | tr | 10 | ns | 3 | |||
| Turn-off delay time | td(off) | 158 | ns | 3 | |||
| Fall time | tf | 9 | ns | 3 | |||
| Gate charge total | Qg | 146 | nC | VDS=400V, ID=25A, VGS=0~10V | 3 | ||
| Gate to drain charge | Qgd | 56 | nC | VDS=400V, ID=25A, VGS=0~10V | 3 | ||
| Gate to source charge | Qgs | 36 | nC | VDS=400V, ID=25A, VGS=0~10V | 3 | ||
| Gate plateau voltage | Vplateau | 5.9 | V | VDS=400V, ID=25A, VGS=0~10V | 3 | ||
| Diode forward voltage | VSD | 1.3 | V | VGS=0V, IF=25A, Tj=25°C | 3 | ||
| Reverse recovery time | trr | 148 | ns | 3 | |||
| Reverse recovery charge | Qrr | 0.95 | µC | VR=400V, IF=25A, diF/dt=100A/µs | 4 | ||
| Peak reverse recovery current | Irr | 13 | A | VR=400V, IF=25A, diF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
GBS60037TOB - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
gbs60037tob-etched.step/gbs60037tob-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gbs60037tob.step/gbs60037tob.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOSEMICON datasheet (10 pp, sha256
ab538c9cad2c52c8, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).