component
GBI7254SMBR
Public Made by Adomby adom
GOSEMICON Isolators - Gate Drivers, SOIC-8L. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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gbi7254smbr: laser-etched CAD + chip hero (factory 2.0.0 backfill)
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GBI7254SMBR
GOSEMICON · Isolators - Gate Drivers · SOIC-8L
GBI7254SMBR from GOSEMICON, in a SOIC-8L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ENA | input | Channel A Enable Input. Biased low disables Channel A output regardless of INA state. Biased high or floating enables Channel A output. Logic threshold ~2.1V typ, absolute max range -5V to 26V. |
| 2 | INA | input | Channel A logic input. Drives OUTA via non-overlap driver. TTL/CMOS compatible with ~1.1V hysteresis. Accepts negative voltage down to -5V for improved noise immunity. |
| 3 | GND | power_in | Power ground return for the device. Common return for both driver channels. |
| 4 | INB | input | Channel B logic input. Drives OUTB via non-overlap driver. TTL/CMOS compatible with ~1.1V hysteresis. Accepts negative voltage down to -5V for improved noise immunity. |
| 5 | OUTB | output | Channel B gate driver output. 5A peak source/sink current with ~10Ω pull-up and ~0.6Ω pull-down resistance. Rise/fall times 8ns/6ns typical into 1nF load. Drives MOSFET/IGBT/GaN gates from GND to VDD. |
| 6 | VDD | power_in | System power supply input. Operating range 4.5V to 24V. UVLO threshold ~4.2V rising with ~300mV hysteresis. Requires local bypass capacitor for peak gate-drive current. |
| 7 | OUTA | output | Channel A gate driver output. 5A peak source/sink current with ~10Ω pull-up and ~0.6Ω pull-down resistance. Rise/fall times 8ns/6ns typical into 1nF load. Drives MOSFET/IGBT/GaN gates from GND to VDD. |
| 8 | ENB | input | Channel B Enable Input. Biased low disables Channel B output regardless of INB state. Biased high or floating enables Channel B output. Logic threshold ~2.1V typ, absolute max range -5V to 26V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOSEMICON |
| Package | SOIC-8L |
| Category | PMIC |
| Pins | 8 |
Ordering variants
Same part, different packaging or reel option.
GBI7254SMBRGBI7254CSMBRGBI7254MMARGBI7254NMCR
CAD (KiCad official)
- Symbol:
GBI7254SMBR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8L (KiCad packages3D, STEP)
- 3D model files:
gbi7254smbr-etched.step/gbi7254smbr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);gbi7254smbr.step/gbi7254smbr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOSEMICON datasheet (15 pp, sha256
90e33738e2efc5f0, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# GBI7254SMBR
**GOSEMICON** · Isolators - Gate Drivers · SOIC-8L
GBI7254SMBR from GOSEMICON, in a SOIC-8L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ENA | input | Channel A Enable Input. Biased low disables Channel A output regardless of INA state. Biased high or floating enables Channel A output. Logic threshold ~2.1V typ, absolute max range -5V to 26V. |
| 2 | INA | input | Channel A logic input. Drives OUTA via non-overlap driver. TTL/CMOS compatible with ~1.1V hysteresis. Accepts negative voltage down to -5V for improved noise immunity. |
| 3 | GND | power_in | Power ground return for the device. Common return for both driver channels. |
| 4 | INB | input | Channel B logic input. Drives OUTB via non-overlap driver. TTL/CMOS compatible with ~1.1V hysteresis. Accepts negative voltage down to -5V for improved noise immunity. |
| 5 | OUTB | output | Channel B gate driver output. 5A peak source/sink current with ~10Ω pull-up and ~0.6Ω pull-down resistance. Rise/fall times 8ns/6ns typical into 1nF load. Drives MOSFET/IGBT/GaN gates from GND to VDD. |
| 6 | VDD | power_in | System power supply input. Operating range 4.5V to 24V. UVLO threshold ~4.2V rising with ~300mV hysteresis. Requires local bypass capacitor for peak gate-drive current. |
| 7 | OUTA | output | Channel A gate driver output. 5A peak source/sink current with ~10Ω pull-up and ~0.6Ω pull-down resistance. Rise/fall times 8ns/6ns typical into 1nF load. Drives MOSFET/IGBT/GaN gates from GND to VDD. |
| 8 | ENB | input | Channel B Enable Input. Biased low disables Channel B output regardless of INB state. Biased high or floating enables Channel B output. Logic threshold ~2.1V typ, absolute max range -5V to 26V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOSEMICON |
| Package | SOIC-8L |
| Category | PMIC |
| Pins | 8 |
## Ordering variants
Same part, different packaging or reel option.
- `GBI7254SMBR`
- `GBI7254CSMBR`
- `GBI7254MMAR`
- `GBI7254NMCR`
## CAD (KiCad official)
- Symbol: `GBI7254SMBR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8L (KiCad packages3D, STEP)
- 3D model files: `gbi7254smbr-etched.step` / `gbi7254smbr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `gbi7254smbr.step` / `gbi7254smbr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOSEMICON datasheet](docs/gbi7254smbr-datasheet.pdf) (15 pp, sha256 `90e33738e2efc5f0`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/gbi7254smbr-datasheet.pdf)