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GBI7250TJBR

GOSEMICON · Gate Drivers · TSOT23-5

GBI7250TJBR from GOSEMICON, in a TSOT23-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD power_in Power supply of the gate driver, operating from 4.5V to 20V, must be decoupled with a ceramic capacitor (0.1uF plus 1uF or 10uF recommended) placed close to the VDD-GND pins.
2 GND power_in Power ground, which must be soldered directly to ground planes for improved thermal performance and electrical contact.
3 IN+ input Non-inverting TTL-compatible logic input that is held low when floating; apply the PWM signal here in non-inverting configuration, or connect it to VDD in inverting configuration.
4 IN- input Inverting TTL-compatible logic input (SOT23-THN only) that is held low when floating; connect it to GND for non-inverting operation, or apply the PWM signal here in inverting configuration.
5 OUT output Gate driver output, rated 5A peak source and sink current, with an absolute maximum range of -0.3V to 22V.

Key specifications

Parameter Value
Manufacturer GOSEMICON
Package TSOT23-5
Category Motor Driver ICs
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Logic Input IN+, IN- -5 22 V 3
Gate Driver Output OUT OUT -0.3 22 V 3
Supply Voltage VDD -0.3 24 V 3
Operating junction temperature TJ -40 150 °C 3
Storage temperature TSTG -65 150 °C 3
Supply voltage range VDD 4.5 20 V 3
Input voltage range VIN+,VIN- -5 20 V 3
Operating junction temperature TJ -40 150 °C 3
Input UVLO, VDD rising VDD_UVLO 4.2 4.5 V 4
Input UVLO hysteresis 300 mV 4
Input+ logic high threshold VIN+ 2.3 2.6 V 4
Input+ logic low threshold VIN+ 0.95 1.1 V 4
Input+ hysteresis VIN+_Hys 1.2 V 4
Input- logic high threshold VIN-_H 2.3 2.6 V SOT23-THN 4
Input- logic low threshold VIN-_L 0.95 1.1 V SOT23-THN 4
Input- hysteresis VIN-_Hys 1.2 V SOT23-THN 4
Output pull high resistance ROH 10 14 Ω IOUT= - 10mA 4
Output pull low resistance ROL 0.6 1.2 Ω IOUT= 10mA 4
Output sink/source peak current ISINK/SRC 5 A CLoad=10nF, Fsw=1kHz 4
Quiescent current IQ 30 uA IN+=GND, VDD=3.5V, IN-=VDD(SOT23-THN) 4
Quiescent current IQ 100 uA IN+=GND, VDD=12V, IN-=VDD(SOT23-THN) 4
Output rising time TR 5.3 9 14 ns CLoad=1nF 4
Output falling time TF 3.1 6 11 ns CLoad=1nF 4
IN+ to output propagation delay, rising edge TD_IN+ 6 13 25 ns 4
IN+ to output propagation delay, falling edge TD_IN+ 6 13 25 ns 4
IN- to output propagation delay, rising TD_IN- 6 13 25 ns SOT23-THN 4
IN- to output propagation delay, falling TD_IN- 6 13 25 ns SOT23-THN 4
Minimum input pulse width TMIN_ON 15 25 ns CLoad=1nF 4
Junction to ambient thermal resistance RθJA 107.8 °C/W SOT23-THN package 3
Junction to case thermal resistance RθJC 52.4 °C/W SOT23-THN package 3
Junction to board characterization parameter ψJB 23 °C/W SOT23-THN package 3
Junction to top characterization parameter ψJT 10 °C/W SOT23-THN package 3

CAD (KiCad official)

  • Symbol: GBI7250TJBR
  • Footprint: Package_TO_SOT_SMD:SOT-23-5
  • 3D model: TSOT23-5 (KiCad packages3D, STEP)
  • 3D model files: gbi7250tjbr-etched.step / gbi7250tjbr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); gbi7250tjbr.step / gbi7250tjbr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOSEMICON datasheet (13 pp, sha256 efd7d0c46ba6edc8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF