component
G900P15D5
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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G900P15D5
GOFORD · MOSFETs · DFN5x6-8L
G900P15D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; body diode anode, continuous body diode current rated -60A at TC = 25ºC. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the same source node as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, connected to the same source node as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±20V, threshold -1V to -4V at ID = -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V and continuous drain current -60A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to the same drain node as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to the same drain node as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to the same drain node as pins 5, 6 and 7; pulsed drain current rated -240A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -150 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -60 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | -240 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 100 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 132 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | TC = 25ºC | 1 | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 1.25 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -150 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -150V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | -4 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 65 | 80 | mΩ | VGS = -10V, ID = -5A | 2 | |
| Continuous Body Diode Current | IS | -60 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -5A, VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 9 | S | VDS = -5V, ID = -5A | 2 | ||
| Input Capacitance | Ciss | 4050 | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 149 | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 113 | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 27 | nC | VDD = -75V, ID = -5A, VGS = -10V | 2 | ||
| Gate-Source Charge | Qgs | 7 | nC | VDD = -75V, ID = -5A, VGS = -10V | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VDD = -75V, ID = -5A, VGS = -10V | 2 | ||
| Turn-on Delay Time | td(on) | 10 | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 | ||
| Turn-on Rise Time | tr | 9 | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 29 | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 | ||
| Turn-off Fall Time | tf | 4 | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 434 | nC | IF = -5A, VGS = 0V, di/dt=-500A/us | 2 | ||
| Reverse Recovery Time | Trr | 51 | ns | IF = -5A, VGS = 0V, di/dt=-500A/us | 2 |
CAD (KiCad official)
- Symbol:
G900P15D5 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
g900p15d5-etched.step/g900p15d5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g900p15d5.step/g900p15d5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
2978ca739ef13427, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# G900P15D5
**GOFORD** · MOSFETs · DFN5x6-8L
G900P15D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; body diode anode, continuous body diode current rated -60A at TC = 25ºC. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to the same source node as pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, connected to the same source node as pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage limited to ±20V, threshold -1V to -4V at ID = -250µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -150V and continuous drain current -60A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to the same drain node as pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to the same drain node as pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to the same drain node as pins 5, 6 and 7; pulsed drain current rated -240A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -150 | | | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | -60 | | | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | -240 | | | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 100 | W | TC = 25ºC | 1 |
| Single pulse avalanche energy | EAS | | | 132 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | TC = 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 50 | ºC/W | | 1 |
| Maximum Junction-to-Case | RthJC | | | 1.25 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -150 | | | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS = -150V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | -4 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 65 | 80 | mΩ | VGS = -10V, ID = -5A | 2 |
| Continuous Body Diode Current | IS | | | -60 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | -1.2 | V | TJ = 25ºC, ISD = -5A, VGS = 0V | 2 |
| Forward Transconductance | gFS | | 9 | | S | VDS = -5V, ID = -5A | 2 |
| Input Capacitance | Ciss | | 4050 | | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 149 | | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 113 | | pF | VGS = 0V, VDS = -75V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 27 | | nC | VDD = -75V, ID = -5A, VGS = -10V | 2 |
| Gate-Source Charge | Qgs | | 7 | | nC | VDD = -75V, ID = -5A, VGS = -10V | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VDD = -75V, ID = -5A, VGS = -10V | 2 |
| Turn-on Delay Time | td(on) | | 10 | | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 |
| Turn-on Rise Time | tr | | 9 | | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 |
| Turn-off Delay Time | td(off) | | 29 | | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 |
| Turn-off Fall Time | tf | | 4 | | ns | VDD = -75V, ID = -5A, RG = 3Ω | 2 |
| Reverse Recovery Charge | Qrr | | 434 | | nC | IF = -5A, VGS = 0V, di/dt=-500A/us | 2 |
| Reverse Recovery Time | Trr | | 51 | | ns | IF = -5A, VGS = 0V, di/dt=-500A/us | 2 |
## CAD (KiCad official)
- Symbol: `G900P15D5`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `g900p15d5-etched.step` / `g900p15d5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g900p15d5.step` / `g900p15d5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/g900p15d5-datasheet.pdf) (6 pp, sha256 `2978ca739ef13427`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/g900p15d5-datasheet.pdf)