# G830K

**GOFORD** · MOSFETs · TO-252

G830K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS rated ±30V max, threshold 2 to 4V at ID = 250μA, gate leakage ±100nA max at VGS = ±30V. |
| 2 | D | passive | Drain; VDSS 500V, continuous current 5A at TC=25℃, pulsed 20A, RDS(on) 1.4Ω max at VGS = 10V. |
| 3 | S | passive | Source; body diode continuous forward current 5A, pulsed 20A, VSD 1.4V max at IS = 5A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 500 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 500V, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS = 400V, TC = 125℃ | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±30V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  |  | 1.4 | Ω | VGS = 10V, ID = 2.5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 5 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS = 0V, IS = 5A | 2 |
| Drain-Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TC = 25℃; TO-252 column, limited by maximum junction temperature | 1 |
| Continuous Drain Current | ID |  |  | 3.2 | A | TC = 100℃; TO-252 column | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 150 | mJ | Note 2: L = 10mH, IAS = 6A, VDD = 50V, RG = 25Ω, starting TJ = 25°C | 1 |
| Power Dissipation | PD |  |  | 45 | W | TC = 25℃; TO-252 column | 1 |
| Linear Derating Factor |  |  |  | 0.36 | W/℃ | TC > 25℃; TO-252 column | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.8 | ℃/W | TO-252 column | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `G830K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `g830k-etched.step` / `g830k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g830k.step` / `g830k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](docs/g830k-datasheet.pdf) (6 pp, sha256 `488e66f72dffb14a`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g830k-datasheet.pdf)