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G800N06S2

Public Made by Adom

by adom

GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G800N06S2

GOFORD · MOSFETs · SOP-8

G800N06S2 from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, VDS 60V).
2 G1 input Gate of MOSFET 1, rated VGS ±20V maximum.
3 S2 passive Source of MOSFET 2 (N-channel, VDS 60V).
4 G2 input Gate of MOSFET 2, rated VGS ±20V maximum.
5 D2 passive Drain of MOSFET 2, continuous drain current 3A, pulsed 12A.
6 D2 passive Drain of MOSFET 2, internally common with pin 5.
7 D1 passive Drain of MOSFET 1, continuous drain current 3A, pulsed 12A.
8 D1 passive Drain of MOSFET 1, internally common with pin 7.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC = 25ºC 1
Continuous Drain Current ID 3 A TC = 25ºC 1
Pulsed Drain Current IDM 12 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 1.7 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 73.5 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 0.7 0.9 1.2 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 60 80 mΩ VGS = 10V, ID = 3A 2
Drain-Source On-Resistance RDS(on) 65 85 mΩ VGS = 4.5V, ID = 3A 2
Continuous Body Diode Current IS 3 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 3A, VGS = 0V 2
Forward Transconductance gFS 5 S VGS = 5V, ID = 3A 2
Input Capacitance Ciss 458 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
Output Capacitance Coss 26 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 23 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
Total Gate Charge Qg 6 nC VDD = 30V, ID = 3A, VGS = 10V 2
Gate-Source Charge Qgs 1 nC VDD = 30V, ID = 3A, VGS = 10V 2
Gate-Drain Charge Qgd 1.3 nC VDD = 30V, ID = 3A, VGS = 10V 2
Turn-on Delay Time td(on) 15 ns VDD = 30V, ID = 3A, RG = 1Ω 2
Turn-on Rise Time tr 6 ns VDD = 30V, ID = 3A, RG = 1Ω 2
Turn-off Delay Time td(off) 15 ns VDD = 30V, ID = 3A, RG = 1Ω 2
Turn-off Fall Time tf 10 ns VDD = 30V, ID = 3A, RG = 1Ω 2
Reverse Recovery Charge Qrr 24 nC IF = 3A, VGS = 0V, di/dt=500A/us 2
Reverse Recovery Time Trr 12 ns IF = 3A, VGS = 0V, di/dt=500A/us 2

CAD (KiCad official)

  • Symbol: G800N06S2
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: g800n06s2-etched.step / g800n06s2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g800n06s2.step / g800n06s2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 db302b8134e358c6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF