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G7K2N20LLE

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GOFORD MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G7K2N20LLE

GOFORD · MOSFETs · SOT-23-6L

G7K2N20LLE from GOFORD, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain; connected to the drain (VDS rated 200 V, ID 2 A continuous).
2 D passive Drain; connected to the drain (VDS rated 200 V, ID 2 A continuous).
3 G input Gate; gate-source voltage limited to ±20 V, threshold 1 V min to 2.5 V max at 250 µA.
4 S passive Source; connected to the source and body diode anode, with continuous body diode current of 2 A.
5 D passive Drain; connected to the drain (VDS rated 200 V, ID 2 A continuous).
6 D passive Drain; connected to the drain (VDS rated 200 V, ID 2 A continuous).

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V TC = 25ºC 1
Continuous Drain Current ID 2 A TC = 25ºC 1
Pulsed Drain Current IDM 8 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 1.8 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 70 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 200 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 200V, VGS = 0V 2
Gate-Source Leakage IGSS -30 30 uA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.8 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 0.57 0.7 Ω VGS = 10V, ID = 1A 2
Drain-Source On-Resistance RDS(on) 0.58 0.72 Ω VGS = 4.5V, ID = 1A 2
Continuous Body Diode Current IS 2 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 1A, VGS = 0V 2
Forward Transconductance gFS 0.94 S VGS = 5V, ID = 1A 2
Input Capacitance Ciss 577 pF VGS = 0V, VDS = 100V, f = 1.0MHz 2
Output Capacitance Coss 19 pF VGS = 0V, VDS = 100V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 13 pF VGS = 0V, VDS = 100V, f = 1.0MHz 2
Total Gate Charge Qg 10.8 nC VDD = 100V, ID = 1A, VGS = 10V 2
Gate-Source Charge Qgs 1.7 nC VDD = 100V, ID = 1A, VGS = 10V 2
Gate-Drain Charge Qgd 3.1 nC VDD = 100V, ID = 1A, VGS = 10V 2
Turn-on Delay Time td(on) 10.7 ns VDD = 100V, ID = 1A, RG = 10Ω 2
Turn-on Rise Time tr 7.3 ns VDD = 100V, ID = 1A, RG = 10Ω 2
Turn-off Delay Time td(off) 18.2 ns VDD = 100V, ID = 1A, RG = 10Ω 2
Turn-off Fall Time tf 11.9 ns VDD = 100V, ID = 1A, RG = 10Ω 2
Reverse Recovery Charge Qrr 357 nC IF = 1A, VGS = 0V, di/dt=100A/us 2
Reverse Recovery Time Trr 125 ns IF = 1A, VGS = 0V, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: G7K2N20LLE
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: g7k2n20lle-etched.step / g7k2n20lle-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g7k2n20lle.step / g7k2n20lle.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 e471e0abb645edb1, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF