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G75P04M

Public Made by Adom

by adom

GOFORD MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G75P04M

GOFORD · MOSFETs · TO-263

G75P04M from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the P-channel MOSFET with VGS rated ±20 V and turn-on threshold VGS(th) of -1.0 V to -2.5 V.
2 D passive Drain, also the exposed tab; VDS rated -40 V and continuous drain current ID of -80 A.
3 S passive Source; body diode continuous current IS is -80 A with VSD of at most -1.2 V.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V TC = 25ºC 1
Continuous Drain Current ID -80 A TC = 25ºC 1
Pulsed Drain Current IDM -320 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 115 W TC = 25ºC 1
Single pulse avalanche energy EAS 306 mJ Tj=25℃, VDD=-40V, VGS=-10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W 1
Maximum Junction-to-Case RthJC 1.08 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -40V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.7 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 5.3 6.5 mΩ VGS = -10V, ID = -30A 2
Drain-Source On-Resistance RDS(on) 7 8.5 mΩ VGS = -4.5V, ID = -30A 2
Continuous Body Diode Current IS -80 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -30A, VGS = 0V 2
Forward Transconductance gFS 52 S VDS = -5V, ID = -30A 2
Input Capacitance Ciss 6516 pF VGS = 0V, VDS = -20V, f = 1.0MHz 2
Output Capacitance Coss 698 pF VGS = 0V, VDS = -20V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 668 pF VGS = 0V, VDS = -20V, f = 1.0MHz 2
Total Gate Charge Qg 106 nC VDD = -20V, ID = -30A, VGS = -10V 2
Gate-Source Charge Qgs 22 nC VDD = -20V, ID = -30A, VGS = -10V 2
Gate-Drain Charge Qgd 27 nC VDD = -20V, ID = -30A, VGS = -10V 2
Turn-on Delay Time td(on) 15 ns VDD = -20V, ID = -30A, RG = 1Ω 2
Turn-on Rise Time tr 12 ns VDD = -20V, ID = -30A, RG = 1Ω 2
Turn-off Delay Time td(off) 70 ns VDD = -20V, ID = -30A, RG = 1Ω 2
Turn-off Fall Time tf 18 ns VDD = -20V, ID = -30A, RG = 1Ω 2
Reverse Recovery Charge Qrr 50 nC IF = -30A, VGS = 0V, di/dt=-100A/us 2
Reverse Recovery Time Trr 53 ns IF = -30A, VGS = 0V, di/dt=-100A/us 2

CAD (KiCad official)

  • Symbol: G75P04M
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: g75p04m-etched.step / g75p04m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g75p04m.step / g75p04m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 78ce0b6441fb35fb, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF