# G75P04K

**GOFORD** · MOSFETs · TO-252

G75P04K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of -1.2 to -2.5 V. |
| 2 | D | passive | Drain (center pin, also the exposed tab); drain-source voltage rated -40 V with continuous drain current of -70 A. |
| 3 | S | passive | Source; the body diode carries a continuous forward current of up to -70 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -40 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | -70 | A |  | 1 |
| Drain Current-Continuous (TC=100℃) | ID (100℃) |  |  | -49.5 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | -200 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 130 | W |  | 1 |
| Derating factor |  |  | 1.04 |  | W/℃ |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 1012 | mJ | Note 5: Tj=25℃, VDD=-20V, VG=-10V, L=1mH, Rg=25Ω, IAS=45A | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case (Note 2) | RθJC |  | 0.96 |  | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -40 |  |  | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-40V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.9 | -2.5 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 7.5 | 10 | mΩ | VGS=-10V, ID=-20A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V,IS=-70A | 2 |
| Diode Forward Current | IS |  |  | -70 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `G75P04K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `g75p04k-etched.step` / `g75p04k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g75p04k.step` / `g75p04k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](docs/g75p04k-datasheet.pdf) (6 pp, sha256 `ebdccba762516de9`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g75p04k-datasheet.pdf)