component
G700P06LL
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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G700P06LL
GOFORD · MOSFETs · SOT-23-6
G700P06LL from GOFORD, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 2, 5 and 6. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 1, 5 and 6. |
| 3 | G | input | Gate of the P-channel MOSFET, absolute maximum VGS ±20V, with RDS(on) specified at VGS -10V and -4.5V. |
| 4 | S | passive | Source of the P-channel MOSFET, with body diode continuous current rated -5A. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 1, 2 and 6. |
| 6 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 1, 2 and 5. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Continuous Drain Current | ID | -5 | A | 1 | |||
| Pulsed Drain Current (note1) | IDM | -20 | A | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 3.1 | W | 1 | |||
| Single pulse avalanche energy (note2) | EAS | 25 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 40.3 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 61 | 75 | mΩ | VGS = -10V, ID = -3.2A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 74 | 90 | mΩ | VGS = -4.5V, ID = -3.2A | 2 | |
| Continuous Body Diode Current | IS | -5 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -30A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
G700P06LL - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
g700p06ll-etched.step/g700p06ll-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g700p06ll.step/g700p06ll.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
3375ae842e4db9a6, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# G700P06LL
**GOFORD** · MOSFETs · SOT-23-6
G700P06LL from GOFORD, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 2, 5 and 6. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 1, 5 and 6. |
| 3 | G | input | Gate of the P-channel MOSFET, absolute maximum VGS ±20V, with RDS(on) specified at VGS -10V and -4.5V. |
| 4 | S | passive | Source of the P-channel MOSFET, with body diode continuous current rated -5A. |
| 5 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 1, 2 and 6. |
| 6 | D | passive | Drain of the P-channel MOSFET, rated VDS -60V and continuous ID -5A (pulsed -20A), shorted to pins 1, 2 and 5. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -60 | V | | 1 |
| Continuous Drain Current | ID | | | -5 | A | | 1 |
| Pulsed Drain Current (note1) | IDM | | | -20 | A | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Power Dissipation | PD | | | 3.1 | W | | 1 |
| Single pulse avalanche energy (note2) | EAS | | | 25 | mJ | Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 40.3 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | | | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS = -60V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.8 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 61 | 75 | mΩ | VGS = -10V, ID = -3.2A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 74 | 90 | mΩ | VGS = -4.5V, ID = -3.2A | 2 |
| Continuous Body Diode Current | IS | | | -5 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | -1.2 | V | TJ = 25ºC, ISD = -30A, VGS = 0V | 2 |
## CAD (KiCad official)
- Symbol: `G700P06LL`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files: `g700p06ll-etched.step` / `g700p06ll-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g700p06ll.step` / `g700p06ll.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/g700p06ll-datasheet.pdf) (6 pp, sha256 `3375ae842e4db9a6`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/g700p06ll-datasheet.pdf)