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G700P06D5

GOFORD · MOSFETs · DFN5x6-8L

G700P06D5 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; continuous drain current is rated -25A at TC = 25ºC and the body diode continuous current IS is -25A max.
2 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 3; continuous drain current is rated -25A at TC = 25ºC.
3 S passive Source of the P-channel MOSFET, tied to the same source as pins 1 and 2; continuous drain current is rated -25A at TC = 25ºC.
4 G input Gate of the P-channel MOSFET; gate-source voltage is rated ±20V max, with threshold VGS(th) of -1V min to -2.5V max at ID = -250µA.
5 D passive Drain of the P-channel MOSFET, tied to pins 6-8; drain-source voltage is rated -60V, continuous drain current -25A and pulsed drain current -80A.
6 D passive Drain of the P-channel MOSFET, tied to pins 5, 7 and 8; drain-source voltage is rated -60V and continuous drain current -25A.
7 D passive Drain of the P-channel MOSFET, tied to pins 5, 6 and 8; drain-source voltage is rated -60V and continuous drain current -25A.
8 D passive Drain of the P-channel MOSFET, tied to pins 5-7; drain-source voltage is rated -60V and continuous drain current -25A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Continuous Drain Current ID -25 A 1
Pulsed Drain Current IDM -80 A 1
Gate-Source Voltage VGS -20 20 V 1
Power Dissipation PD 42 W 1
Single pulse avalanche energy EAS 25 mJ Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω (note 2) 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W 1
Maximum Junction-to-Case RthJC 3 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -60V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.7 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 58 70 mΩ VGS = -10V, ID = -4A 2
Drain-Source On-Resistance RDS(on) 70 85 mΩ VGS = -4.5V, ID = -3A 2
Continuous Body Diode Current IS -25 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -4A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: G700P06D5
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: g700p06d5-etched.step / g700p06d5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g700p06d5.step / g700p06d5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 33ebdb13f48a5274, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF