component
G6N02L-B
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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G6N02L-B
GOFORD · MOSFETs · SOT-23-3L
G6N02L-B from GOFORD, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold VGS(th) 0.5 to 0.9 V at ID = 250µA. |
| 2 | S | passive | Source; continuous body diode current up to 6 A at TC = 25ºC. |
| 3 | D | passive | Drain; drain-source voltage rated 20 V, continuous drain current 6 A and pulsed drain current 24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 6 | A | 1 | |||
| Pulsed Drain Current | IDM | 24 | A | note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Power Dissipation | PD | 1 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 120 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±12V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 | 0.7 | 0.9 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 13 | 15 | mΩ | VGS = 4.5V, ID = 3A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 15 | 17 | mΩ | VGS = 2.5V, ID = 3A | 2 | |
| Forward Transconductance | 24 | S | VGS = 5V, ID = 3A | 2 | |||
| Continuous Body Diode Current | IS | 6 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 3A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
G6N02L-B - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
g6n02l-b-etched.step/g6n02l-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g6n02l-b.step/g6n02l-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
6829895ab3fc3444, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).