G50N03D5

{
  "schema_version": 1,
  "type": "component",
  "slug": "g50n03d5",
  "title": "G50N03D5",
  "brief": "GOFORD MOSFETs, DFN-8L(5x6). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "g50n03d5"
  ],
  "component": {
    "mpn": "G50N03D5",
    "manufacturer": "GOFORD",
    "package": "DFN-8L(5x6)",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.gofordsemi.com/upload/cn/propdf/G50N03D5.pdf",
    "parts": {
      "symbol": "g50n03d5.kicad_sym",
      "footprint": "g50n03d5.kicad_mod",
      "model_3d": "g50n03d5-etched.glb",
      "model_3d_plain": "g50n03d5.glb",
      "model_3d_step": "g50n03d5-etched.step",
      "model_3d_step_plain": "g50n03d5.step",
      "lbr": "g50n03d5.lbr"
    },
    "distributor_links": {},
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET. Pins 1, 2, and 3 are internally tied together as the source connection; typically bonded to the ground/return rail in low-side switching. Body diode anode."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal (parallel connection with pins 1 and 3) to share current and reduce package resistance/inductance. Rated for ID = 50A continuous, IDM = 200A pulsed."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal (parallel connection with pins 1 and 2). Body-diode anode; VSD ≤ 1.2V at ISD = 20A."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal. Controls the channel via VGS; threshold VGS(th) = 1.1-2.4V (typ 1.6V). Absolute maximum VGS = ±20V. Total gate charge Qg ≈ 38.4nC at VGS = 10V."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal. Pins 5, 6, 7, 8 (and the exposed thermal pad) are internally the drain connection for the N-channel MOSFET. VDS rating = 30V. Body-diode cathode."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (parallel with pins 5, 7, 8 and exposed pad). Used to carry drain current and conduct heat to the PCB."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (parallel with pins 5, 6, 8 and exposed pad). Continuous drain current ID = 50A at TC = 25°C."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal (parallel with pins 5, 6, 7 and exposed thermal pad). All drain leads plus the pad should be soldered together to a copper plane to meet the 4.9°C/W junction-to-case thermal spec."
      }
    ],
    "provenance": {
      "extractor": "ds2sf",
      "datasheet": {
        "url": "https://www.gofordsemi.com/upload/cn/propdf/G50N03D5.pdf",
        "pages": null,
        "sha256": "731b3d4e30fe7344",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "g50n03d5.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6.0,
          4.98,
          0.92
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "g50n03d5-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6.0,
          4.98,
          0.92
        ],
        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "6980ce3c412a867d936e43de1d79fd29f51e7964ef88de2400d24500af1046a8",
        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "GOFORD",
      "Package": "DFN-8L(5x6)",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "731b3d4e30fe7344",
      "rows": [
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 200,
          "conditions": "note 1",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 25.5,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 81,
          "conditions": "note 2",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ, Tstg",
          "kind": "absolute_maximum",
          "unit": "ºC",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction-to-Ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "ºC/W",
          "min": null,
          "typ": null,
          "max": 49.8,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Junction-to-Case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "ºC/W",
          "min": null,
          "typ": null,
          "max": 4.9,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 30,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = 250µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS = 30 V, VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS = ±20V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.1,
          "typ": 1.6,
          "max": 2.4,
          "conditions": "VDS = VGS, ID = 250µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 3.2,
          "max": 4,
          "conditions": "VGS = 10V, ID = 20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source On-Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 5.9,
          "max": 7,
          "conditions": "VGS = 4.5V, ID = 20A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous Body Diode Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "TC = 25ºC",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Body Diode Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "TJ = 25ºC, ISD = 20A, VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [
    {
      "mpn": "G50N03D5",
      "kind": "packaging"
    }
  ],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "g50n03d5"
  ],
  "discovery_pitch": "G50N03D5 (GOFORD) component page with datasheet-verified CAD.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "g50n03d5.kicad_sym",
    "g50n03d5.kicad_mod",
    "g50n03d5.glb",
    "g50n03d5.step",
    "g50n03d5.lbr",
    "docs/hero.png",
    "docs/g50n03d5-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html"
  ],
  "visibility": {
    "public": true
  },
  "updated_at": "2026-09-24T20:52:23.818Z"
}