# G500P03IE

**GOFORD** · MOSFETs · SOT-23

G500P03IE from GOFORD, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with threshold VGS(th) of -0.6 V min to -1.3 V max at ID = -250µA and an internal ESD protection diode (HBM 7 kV). |
| 2 | S | passive | Source of the P-channel MOSFET; body diode conducts source-to-drain up to -4.6 A continuous with VSD max -1.2 V. |
| 3 | D | passive | Drain; VDS rated -30 V, continuous drain current -4.6 A and pulsed -18.4 A, with RDS(on) below 55 mΩ at VGS = -10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -4.6 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | -18.4 | A |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Power Dissipation | PD |  |  | 1.4 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 14 | mJ |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  | 89 |  | ºC/W | t≤10s | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS = -30V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±12V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.6 | -0.8 | -1.3 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 42 | 55 | mΩ | VGS = -10V, ID = -4A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 48 | 65 | mΩ | VGS = -4.5V, ID = -4A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 62 | 90 | mΩ | VGS = -2.5V, ID = -2A | 2 |
| Continuous Body Diode Current | IS |  |  | -4.6 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD |  |  | -1.2 | V | TJ = 25ºC, ISD = -4A, VGS = 0V | 2 |

## CAD (KiCad official)

- Symbol: `G500P03IE`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `g500p03ie-etched.step` / `g500p03ie-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g500p03ie.step` / `g500p03ie.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](docs/g500p03ie-datasheet.pdf) (6 pp, sha256 `dfce5226dc7ec564`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g500p03ie-datasheet.pdf)