component
G4N60K
Public Made by Adomby adom
GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| g4n60k-etched.glb | 17d ago |
| g4n60k-etched.step | 17d ago |
| g4n60k-hero.glb | 17d ago |
| g4n60k-hero.overlay.json | 17d ago |
| g4n60k.glb | 17d ago |
| g4n60k.kicad_mod | 17d ago |
| g4n60k.kicad_sym | 17d ago |
| g4n60k.lbr | 17d ago |
| g4n60k.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
G4N60K
GOFORD · MOSFETs · TO-252
G4N60K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-source voltage of ±30 V and threshold of 2 to 4 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain (also the tab); drain-source voltage rated 600 V, continuous drain current 4 A at TC = 25℃ and pulsed 16 A. |
| 3 | S | passive | Source; connects to the body diode anode, with maximum continuous diode forward current of 4 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 600 | V | VGS = 0V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 600V, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 480V, TC = 125℃ | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 2 | 2.3 | Ω | VGS = 10V, ID = 2A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.5 | V | VGS = 0V, IS = 2A | 2 | ||
| Drain-Source Voltage | VDSS | 600 | V | TC = 25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 4 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 2.78 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 180 | mJ | 1 | |||
| Peak Diode Recovery Energy | dv/dt | 4.8 | V/ns | 1 | |||
| Power Dissipation | PD | 44.6 | W | TC = 25℃ | 1 | ||
| Linear Derating Factor | 0.357 | W/℃ | TC > 25℃ | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.8 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
G4N60K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
g4n60k-etched.step/g4n60k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g4n60k.step/g4n60k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (7 pp, sha256
e117be69774678a8, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).